Document Number: MRF1570N Freescale Semiconductor Rev. 10, 6/2009 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF1570NT1 Designed for broadband commercial and industrial applications with frequen- MRF1570FNT1 cies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applica- tions in 12.5 volt mobile FM equipment. 470 MHz, 70 W, 12.5 V Specified Performance 470 MHz, 12.5 Volts LATERAL N-CHANNEL Output Power 70 Watts BROADBAND Power Gain 11.5 dB RF POWER MOSFETs Efficiency 60% Capable of Handling 20:1 VSWR, 15.6 Vdc, 470 MHz, 2 dB Overdrive Features CASE 1366-05, STYLE 1 Excellent Thermal Stability TO-272-8 WRAP PLASTIC Characterized with Series Equivalent Large-Signal Impedance Parameters MRF1570NT1 Broadband-Full Power Across the Band: 135-175 MHz 400-470 MHz Broadband Demonstration Amplifier Information Available Upon Request 200 C Capable Plastic Package CASE 1366A-03, STYLE 1 N Suffix Indicates Lead-Free Terminations. RoHS Compliant. TO-272-8 PLASTIC In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1570FNT1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V +0.5, +40 Vdc DSS Gate-Source Voltage V 20 Vdc GS Total Device Dissipation T = 25C P 165 W C D Derate above 25C 0.5 W/C Storage Temperature Range T - 65 to +150 C stg Operating Junction Temperature T 200 C J Table 2. Thermal Characteristics (1) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 0.29 C/W JC Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 C 1. MTTF calculator available at Table 5. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Current I 1 A DSS (V = 60 Vdc, V = 0 Vdc) DS GS On Characteristics Gate Threshold Voltage V 1 3 Vdc GS(th) (V = 12.5 Vdc, I = 0.8 mAdc) DS D Drain-Source On-Voltage V 1 Vdc DS(on) (V = 10 Vdc, I = 2.0 Adc) GS D Dynamic Characteristics Input Capacitance (Includes Input Matching Capacitance) C 500 pF iss (V = 12.5 Vdc, V = 0 V, f = 1 MHz) DS GS Output Capacitance C 250 pF oss (V = 12.5 Vdc, V = 0 V, f = 1 MHz) DS GS Reverse Transfer Capacitance C 35 pF rss (V = 12.5 Vdc, V = 0 V, f = 1 MHz) DS GS RF Characteristics (In Freescale Test Fixture) Common-Source Amplifier Power Gain G 11.5 dB ps (V = 12.5 Vdc, P = 70 W, I = 800 mA) f = 470 MHz DD out DQ Drain Efficiency 60 % (V = 12.5 Vdc, P = 70 W, I = 800 mA) f = 470 MHz DD out DQ MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 2