X-On Electronics has gained recognition as a prominent supplier of MRF1535FNT1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF1535FNT1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF1535FNT1 NXP

MRF1535FNT1 electronic component of NXP
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Part No.MRF1535FNT1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Freescale Semiconductor RF MOSFET Transistors RF LDMOS FET TO-272N
Datasheet: MRF1535FNT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 500
Multiples : 500
500 : USD 12.9243
N/A

Obsolete
0
MOQ : 500
Multiples : 500
500 : USD 12.8538
1000 : USD 12.6706
2500 : USD 11.7019
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Factory Pack Quantity :
Height
Length
Width
Channel Mode
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the MRF1535FNT1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF1535FNT1 and other electronic components in the RF MOSFET Transistors category and beyond.

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Document Number: MRF1535N Freescale Semiconductor Rev. 13, 6/2009 Technical Data RF Power Field Effect Transistors MRF1535NT1 N-Channel Enhancement-Mode Lateral MOSFETs MRF1535FNT1 Designed for broadband commercial and industrial applications with frequen- cies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 520 MHz, 35 W, 12.5 V 12.5 volt mobile FM equipment. LATERAL N-CHANNEL Specified Performance 520 MHz, 12.5 Volts BROADBAND Output Power 35 Watts RF POWER MOSFETs Power Gain 13.5 dB Efficiency 55% Capable of Handling 20:1 VSWR, 15.6 Vdc, 520 MHz, 2 dB Overdrive Features Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters Broadband-Full Power Across the Band: 135-175 MHz 400-470 MHz CASE 1264-10, STYLE 1 450-520 MHz TO-272-6 WRAP 200 C Capable Plastic Package PLASTIC MRF1535NT1 N Suffix Indicates Lead-Free Terminations. RoHS Compliant. In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. CASE 1264A-03, STYLE 1 TO-272-6 PLASTIC MRF1535FNT1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +40 Vdc DSS Gate-Source Voltage V 20 Vdc GS Drain Current Continuous I 6 Adc D (1) Total Device Dissipation T = 25C P 135 W C D Derate above 25C 0.50 W/C Storage Temperature Range T - 65 to +150 C stg Operating Junction Temperature T 200 C J Table 2. Thermal Characteristics (2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 0.90 C/W JC Table 3. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 C T T J C 1. Calculated based on the formula P = D R JC 2. MTTF calculator available at Table 4. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage V 60 Vdc (BR)DSS (V = 0 Vdc, I = 100 Adc) GS D Zero Gate Voltage Drain Current I 1 Adc DSS (V = 60 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 0.3 Adc GSS (V = 10 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1 2.6 Vdc GS(th) (V = 12.5 Vdc, I = 400 A) DS D Drain-Source On-Voltage R 0.7 DS(on) (V = 5 Vdc, I = 0.6 A) GS D Drain-Source On-Voltage V 1 Vdc DS(on) (V = 10 Vdc, I = 2.0 Adc) GS D Dynamic Characteristics Input Capacitance (Includes Input Matching Capacitance) C 250 pF iss (V = 12.5 Vdc, V = 0 V, f = 1 MHz) DS GS Output Capacitance C 150 pF oss (V = 12.5 Vdc, V = 0 V, f = 1 MHz) DS GS Reverse Transfer Capacitance C 20 pF rss (V = 12.5 Vdc, V = 0 V, f = 1 MHz) DS GS RF Characteristics (In Freescale Test Fixture) Common-Source Amplifier Power Gain G 13.5 dB ps (V = 12.5 Vdc, P = 35 Watts, I = 500 mA) f = 520 MHz DD out DQ Drain Efficiency 55 % (V = 12.5 Vdc, P = 35 Watts, I = 500 mA) f = 520 MHz DD out DQ MRF1535NT1 MRF1535FNT1 RF Device Data Freescale Semiconductor 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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