X-On Electronics has gained recognition as a prominent supplier of ARF448BG RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. ARF448BG RF MOSFET Transistors are a product manufactured by Microchip. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

ARF448BG Microchip

ARF448BG electronic component of Microchip
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Part No.ARF448BG
Manufacturer: Microchip
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors FG, MOSFET, 500V, TO-247, RoHS
Datasheet: ARF448BG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 48.2266
10 : USD 43.2631
25 : USD 41.9023
50 : USD 39.9315
100 : USD 37.2687
250 : USD 37.21
500 : USD 37.1983
N/A

Obsolete
   
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We are delighted to provide the ARF448BG from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ARF448BG and other electronic components in the RF MOSFET Transistors category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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D ARF448A(G) G ARF448B(G) S TO-247 Common Source RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Low Cost Common Source RF Package. Specified 150 Volt, 40.68 MHz Characteristics: Very High Breakdown for Improved Ruggedness. Output Power = 140 Watts. Low Thermal Resistance. Gain = 15dB (Class C) Nitride Passivated Die for Improved Reliability. Efficiency = 75% MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter ARF448A/448B(G) UNIT V Drain-Source Voltage 450 DSS Volts V Drain-Gate Voltage 450 DGO I Continuous Drain Current @ T = 25C 15 Amps D C V Gate-Source Voltage 30 Volts GS P Total Power Dissipation @ T = 25C 230 Watts D C R Junction to Case 0.55 C/W qJC T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063" from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250 mA) 450 DSS GS D Volts 1 V (ON) On State Drain Voltage (I (ON) = 7.5A, V = 10V) 3 DS D GS Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I mA DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 250 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA GSS GS DS g Forward Transconductance (V = 25V, I = 7.5A) 5 8.5 mhos fs DS D V (TH) Gate Threshold Voltage (V = V , I = 50mA) 25 Volts GS DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS ARF448A/448B(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 1400 1700 iss V = 0V GS C Output Capacitance V = 150V 150 200 pF oss DS f = 1 MHz C Reverse Transfer Capacitance 65 100 rss t Turn-on Delay Time 715 d(on) V = 15V GS t Rise Time V = 0.5 V 510 r DD DSS ns I = I @ 25C t Turn-off Delay Time D D[Cont.] 23 40 d(off) R = 1.6W t G Fall Time 12 25 f FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Amplifier Power Gain f = 40.68 MHz 13 15 dB PS V = 0V V = 150V h Drain Efficiency GS DD 70 75 % P = 140W out y Electrical Ruggedness VSWR 20:1 No Degradation in Output Power 1 Pulse Test: Pulse width < 380 mS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 3000 Class C C iss V = 150V DD 25 P = 250W out 1000 20 500 C oss 15 C rss 10 100 5 50 0 10 20 30 40 50 60 65 1 5 10 50 150 FREQUENCY (MHz) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 25 70 10mS T = -55C J 100mS OPERATION HERE LIMITED BY R (ON) DS 20 V > I (ON) x R (ON)MAX. DS D DS 250mSEC. PULSE TEST @ <0.5 % DUTY CYCLE 10 1mS 15 5 10mS 10 1 100mS .5 DC 5 T =+25C C T = +125C T = -55C J J T =+150C J SINGLE PULSE T = +25C J 0 .1 0 2 468 1 5 10 50 100 500 V , GATE-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) GS DS Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area 050-4908 Rev B I , DRAIN CURRENT (AMPERES) GAIN (dB) D I , DRAIN CURRENT (AMPERES) CAPACITANCE (pf) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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