D
ARF448A(G)
G
ARF448B(G)
S
TO-247
Common
Source
RF POWER MOSFETs
N- CHANNEL ENHANCEMENT MODE 150V 140W 65MHz
The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
Low Cost Common Source RF Package.
Specified 150 Volt, 40.68 MHz Characteristics:
Very High Breakdown for Improved Ruggedness.
Output Power = 140 Watts.
Low Thermal Resistance.
Gain = 15dB (Class C)
Nitride Passivated Die for Improved Reliability.
Efficiency = 75%
MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified.
C
Symbol Parameter ARF448A/448B(G) UNIT
V
Drain-Source Voltage 450
DSS
Volts
V
Drain-Gate Voltage 450
DGO
I
Continuous Drain Current @ T = 25C 15 Amps
D
C
V
Gate-Source Voltage 30 Volts
GS
P
Total Power Dissipation @ T = 25C 230 Watts
D
C
R
Junction to Case 0.55 C/W
qJC
T ,T
Operating and Storage Junction Temperature Range -55 to 150
J STG
C
T
Lead Temperature: 0.063" from Case for 10 Sec. 300
L
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
BV
Drain-Source Breakdown Voltage (V = 0V, I = 250 mA)
450
DSS
GS D
Volts
1
V (ON)
On State Drain Voltage (I (ON) = 7.5A, V = 10V)
3
DS
D GS
Zero Gate Voltage Drain Current (V = V , V = 0V)
25
DS DSS GS
I
mA
DSS
Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C)
250
DS DSS GS C
I
Gate-Source Leakage Current (V = 30V, V = 0V)
100 nA
GSS
GS DS
g
Forward Transconductance (V = 25V, I = 7.5A)
5 8.5 mhos
fs
DS D
V (TH)
Gate Threshold Voltage (V = V , I = 50mA)
25 Volts
GS
DS GS D
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - DYNAMIC CHARACTERISTICS ARF448A/448B(G)
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
C
Input Capacitance 1400 1700
iss
V = 0V
GS
C
Output Capacitance V = 150V 150 200 pF
oss
DS
f = 1 MHz
C
Reverse Transfer Capacitance 65 100
rss
t
Turn-on Delay Time
715
d(on) V = 15V
GS
t
Rise Time V = 0.5 V
510
r
DD DSS
ns
I = I @ 25C
t
Turn-off Delay Time
D D[Cont.] 23 40
d(off)
R = 1.6W
t
G
Fall Time
12 25
f
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic Test Conditions MIN TYP MAX
UNIT
G
Common Source Amplifier Power Gain f = 40.68 MHz 13 15
dB
PS
V = 0V V = 150V
h Drain Efficiency GS DD 70 75
%
P = 140W
out
y
Electrical Ruggedness VSWR 20:1 No Degradation in Output Power
1
Pulse Test: Pulse width < 380 mS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
30 3000
Class C
C
iss
V = 150V
DD
25
P = 250W
out
1000
20
500
C
oss
15
C
rss
10
100
5
50
0
10 20 30 40 50 60 65 1 5 10 50 150
FREQUENCY (MHz)
V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
25 70
10mS
T = -55C
J
100mS
OPERATION HERE
LIMITED BY R (ON)
DS
20 V > I (ON) x R (ON)MAX.
DS D DS
250mSEC. PULSE TEST
@ <0.5 % DUTY CYCLE 10
1mS
15 5
10mS
10
1
100mS
.5
DC
5
T =+25C
C
T = +125C
T = -55C
J J
T =+150C
J
SINGLE PULSE
T = +25C
J
0 .1
0 2 468 1 5 10 50 100 500
V , GATE-TO-SOURCE VOLTAGE (VOLTS)
V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS DS
Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area
050-4908 Rev B
I , DRAIN CURRENT (AMPERES) GAIN (dB)
D
I , DRAIN CURRENT (AMPERES)
CAPACITANCE (pf)
D