Document Number: AFT23S160W02S
Freescale Semiconductor
Rev. 0, 11/2013
Technical Data
RF Power LDMOS Transistors
NChannel EnhancementMode Lateral MOSFETs
AFT23S160W02SR3
These 45 watt RF power LDMOS transistors are designed for cellular base
AFT23S160W02GSR3
station applications requiring very wide instantaneous bandwidth capability
covering the frequency range of 2300 to 2400 MHz.
Typical SingleCarrier WCDMA Performance: V = 28 Vdc,
DD
I = 1100 mA, P = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
DQ out
23002400 MHz, 45 W AVG., 28 V
Probability on CCDF.
AIRFAST RF POWER LDMOS
G Output PAR ACPR IRL
ps D
TRANSISTORS
Frequency (dB) (%) (dB) (dBc) (dB)
2300 MHz 17.7 31.0 6.8 34.6 18
2350 MHz 17.8 30.5 6.7 34.5 25
2400 MHz 17.9 30.3 6.6 33.9 14
NI780S2L
Features
AFT23S160W02SR3
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative GateSource Voltage Range for Improved Class C
Operation
Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13inch Reel.
NI780GS2L
AFT23S160W02GSR3
RF /V RF /V
21
in GS out DS
(Top View)
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2013. All rights reserved.
AFT23S160W02SR3 AFT23S160W02GSR3
RF Device Data
Freescale Semiconductor, Inc. 1Table 1. Maximum Ratings
Rating Symbol Value Unit
DrainSource Voltage V 0.5, +65 Vdc
DSS
GateSource Voltage V 6.0, +10 Vdc
GS
Operating Voltage V 32, +0 Vdc
DD
Storage Temperature Range T 65 to +150 C
stg
Case Operating Temperature Range T 40 to +125 C
C
(1,2)
Operating Junction Temperature Range T 40 to +225 C
J
Table 2. Thermal Characteristics
(2,3)
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R 0.53 C/W
JC
Case Temperature 81C, 45 W CW, 28 Vdc, I = 1100 mA, 2400 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22A114) 2
Machine Model (per EIA/JESD22A115) B
Charge Device Model (per JESD22C101) IV
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current I 10 Adc
DSS
(V = 65 Vdc, V = 0 Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 5 Adc
DSS
(V = 28 Vdc, V = 0 Vdc)
DS GS
GateSource Leakage Current I 1 Adc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS DS
On Characteristics
Gate Threshold Voltage V 0.9 1.3 1.7 Vdc
GS(th)
(V = 10 Vdc, I = 219 Adc)
DS D
Gate Quiescent Voltage V 1.4 1.8 2.2 Vdc
GS(Q)
(V = 28 Vdc, I = 1100 mAdc, Measured in Functional Test)
DD D
DrainSource OnVoltage V 0.1 0.2 0.3 Vdc
DS(on)
(V = 6 Vdc, I = 2.19 Adc)
GS D
(4,5)
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1100 mA, P = 45 W Avg., f = 2400 MHz,
DD DQ out
SingleCarrier WCDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain G 17.0 17.9 19.0 dB
ps
Drain Efficiency 28.0 30.3 %
D
Output PeaktoAverage Ratio @ 0.01% Probability on CCDF PAR 6.1 6.6 dB
Adjacent Channel Power Ratio ACPR 33.9 31.5 dBc
Input Return Loss IRL 14 8 dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at