X-On Electronics has gained recognition as a prominent supplier of AFT21H350W04GSR6 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. AFT21H350W04GSR6 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

AFT21H350W04GSR6 NXP

AFT21H350W04GSR6 electronic component of NXP
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Part No.AFT21H350W04GSR6
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 65V 5-Pin NI-1230S T/R
Datasheet: AFT21H350W04GSR6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
150: USD 231.4055 ea
Line Total: USD 34710.82 
Availability - 0
MOQ: 150  Multiples: 150
Pack Size: 150
   
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We are delighted to provide the AFT21H350W04GSR6 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AFT21H350W04GSR6 and other electronic components in the RF MOSFET Transistors category and beyond.

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Document Number: AFT21H350W03S Freescale Semiconductor Rev. 0, 9/2013 Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs AFT21H350W03SR6 These 63 watt asymmetrical Doherty RF power LDMOS transistors are AFT21H350W04GSR6 designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 MHz. 21102170 MHz, 63 W AVG., 28 V Typical Doherty Single--Carrier W--CDMA Performance: V =28Volts, DD AIRFAST RF POWER LDMOS I = 750 mA, V =0.7Vdc, P = 63 Watts Avg., Input Signal DQA GSB out TRANSISTORS PAR = 9.9 dB @ 0.01% Probability on CCDF. G Output PAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 2110 MHz 16.4 47.1 7.5 --26.0 2140 MHz 16.5 46.3 7.5 --27.9 NI--1230S--4S 2170 MHz 16.5 45.2 7.4 --30.1 AFT21H350W03SR6 Features Advanced High Performance In--Package Doherty Designed for Wide Instantaneous Bandwidth Applications Greater Negative Gate--Source Voltage Range for Improved Class C Operation NI--1230GS--4L Designed for Digital Predistortion Error Correction Systems AFT21H350W04GSR6 In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel. Carrier RF /V31 RF /V inA GSA outA DSA (1) RF /V42 RF /V inB GSB outB DSB Peaking (Top View) Figure 1. Pin Connections 1. Pin connections 1 and 2 are DC coupled and RF independent. Freescale Semiconductor, Inc., 2013. All rights reserved. AFT21H350W03SR6 AFT21H350W04GSR6 RF Device Data Freescale Semiconductor, Inc. 1Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature Range T --40 to +125 C C (1,2) Operating Junction Temperature Range T --40 to +225 C J CW Operation @ T =25 C CW 324 W C Derate above 25 C 0.79 W/ C Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 0.49 C/W JC Case Temperature 79C, 63 W CW, 28 Vdc, I = 750 mA, V = 0.7 Vdc, 2140 MHz DQA GSB Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65 Vdc, V =0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =28 Vdc, V =0 Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5 Vdc, V =0 Vdc) GS DS On Characteristics -- Side A (Carrier) (5) Gate Threshold Voltage V 0.8 1.2 1.6 Vdc GS(th) (V =6 Vdc, I = 146 Adc) DS D (5) Gate Quiescent Voltage V 1.4 1.8 2.2 Vdc GS(Q) (V =28 Vdc, I = 750 mAdc, Measured in Functional Test) DD DA (4) Drain--Source On--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10 Vdc, I =4.0 Adc) GS D On Characteristics -- Side B (Peaking) (5) Gate Threshold Voltage V 0.8 1.2 1.6 Vdc GS(th) (V =6 Vdc, I = 303 Adc) DS D (4) Drain--Source On--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10 Vdc, I =4.0 Adc) GS D 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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