Document Number: AFT21H350W03S
Freescale Semiconductor
Rev. 0, 9/2013
Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs AFT21H350W03SR6
These 63 watt asymmetrical Doherty RF power LDMOS transistors are AFT21H350W04GSR6
designed for cellular base station applications requiring very wide
instantaneous bandwidth capability covering the frequency range of 2110 to
2170 MHz.
21102170 MHz, 63 W AVG., 28 V
Typical Doherty Single--Carrier W--CDMA Performance: V =28Volts,
DD
AIRFAST RF POWER LDMOS
I = 750 mA, V =0.7Vdc, P = 63 Watts Avg., Input Signal
DQA GSB out
TRANSISTORS
PAR = 9.9 dB @ 0.01% Probability on CCDF.
G Output PAR ACPR
ps D
Frequency (dB) (%) (dB) (dBc)
2110 MHz 16.4 47.1 7.5 --26.0
2140 MHz 16.5 46.3 7.5 --27.9
NI--1230S--4S
2170 MHz 16.5 45.2 7.4 --30.1 AFT21H350W03SR6
Features
Advanced High Performance In--Package Doherty
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI--1230GS--4L
Designed for Digital Predistortion Error Correction Systems
AFT21H350W04GSR6
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
Carrier
RF /V31 RF /V
inA GSA outA DSA
(1)
RF /V42 RF /V
inB GSB outB DSB
Peaking
(Top View)
Figure 1. Pin Connections
1. Pin connections 1 and 2 are DC coupled
and RF independent.
Freescale Semiconductor, Inc., 2013. All rights reserved.
AFT21H350W03SR6 AFT21H350W04GSR6
RF Device Data
Freescale Semiconductor, Inc. 1Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V --0.5, +65 Vdc
DSS
Gate--Source Voltage V --6.0, +10 Vdc
GS
Operating Voltage V 32, +0 Vdc
DD
Storage Temperature Range T --65 to +150 C
stg
Case Operating Temperature Range T --40 to +125 C
C
(1,2)
Operating Junction Temperature Range T --40 to +225 C
J
CW Operation @ T =25 C CW 324 W
C
Derate above 25 C 0.79 W/ C
Table 2. Thermal Characteristics
(2,3)
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R 0.49 C/W
JC
Case Temperature 79C, 63 W CW, 28 Vdc, I = 750 mA, V = 0.7 Vdc, 2140 MHz
DQA GSB
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (T =25 C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current I 10 Adc
DSS
(V =65 Vdc, V =0 Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 5 Adc
DSS
(V =28 Vdc, V =0 Vdc)
DS GS
Gate--Source Leakage Current I 1 Adc
GSS
(V =5 Vdc, V =0 Vdc)
GS DS
On Characteristics -- Side A (Carrier)
(5)
Gate Threshold Voltage V 0.8 1.2 1.6 Vdc
GS(th)
(V =6 Vdc, I = 146 Adc)
DS D
(5)
Gate Quiescent Voltage V 1.4 1.8 2.2 Vdc
GS(Q)
(V =28 Vdc, I = 750 mAdc, Measured in Functional Test)
DD DA
(4)
Drain--Source On--Voltage V 0.1 0.2 0.3 Vdc
DS(on)
(V =10 Vdc, I =4.0 Adc)
GS D
On Characteristics -- Side B (Peaking)
(5)
Gate Threshold Voltage V 0.8 1.2 1.6 Vdc
GS(th)
(V =6 Vdc, I = 303 Adc)
DS D
(4)
Drain--Source On--Voltage V 0.1 0.2 0.3 Vdc
DS(on)
(V =10 Vdc, I =4.0 Adc)
GS D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at