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This literature is subject to all applicable copyright laws and is not for resale in any manner.FDB8870 May 2008 tm FDB8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to r = 3.9m , V = 10V, I = 35A DS(ON) GS D improve the overall efficiency of DC/DC converters using r = 4.4m , V = 4.5V, I = 35A either synchronous or conventional switching PWM DS(ON) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(ON) r DS(ON) Low gate charge Applications High power and current handling capability DC/DC converters D GATE G DRAIN SOURCE S (FLANGE) TO-263AB FDB SERIES MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage 20 V GS Drain Current o 160 A Continuous (T = 25 C, V = 10V) (Note 1) C GS o I Continuous (T = 25 C, V = 4.5V) (Note 1) 150 A D C GS o o Continuous (T = 25 C, V = 10V, with R = 43 C/W) 23 A amb GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 2) 300 mJ AS Power dissipation 160 W P D o o Derate above 25C1.07W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-263 0.94 C/W JC o R Thermal Resistance Junction to Ambient TO-263 ( Note 3) 62 C/W JA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB8870 FDB8870 TO-263AB 330mm 24mm 800 units 2008 Fairchild Semiconductor Corporation FDB8870 Rev. A3