X-On Electronics has gained recognition as a prominent supplier of FDB86569-F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDB86569-F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDB86569-F085 ON Semiconductor

FDB86569-F085 electronic component of ON Semiconductor
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See Product Specifications
Part No.FDB86569-F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) TO-263 T/R
Datasheet: FDB86569-F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 4.701
10 : USD 1.9544
25 : USD 1.8032
100 : USD 1.3475
250 : USD 1.3346
500 : USD 1.1196
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.0777
10 : USD 1.5291
25 : USD 1.4027
100 : USD 1.2179
500 : USD 1.0254
800 : USD 0.8721
2400 : USD 0.845
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Width
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Mxhts
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We are delighted to provide the FDB86569-F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDB86569-F085 and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, POWERTRENCH 60 V, 80 A, 5.6 m FDB86569-F085 Features www.onsemi.com Typical R = 4.4 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 35 nC at V = 10 V, I = 80 A g(tot) GS D D UIS Capability These Device is PbFree and is RoHS Compliant Qualified to AECQ101 G Applications Automotive Engine Control S PowerTrain Management D2PAK3 Solenoid and Motor Drivers CASE 418AJ Integrated Starter/Alternator FDB SERIES Primary Switch for 12 V Systems DRAIN GATE SOURCE MARKING DIAGRAM Y&Z&3&K FDB 86569 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FDB86569 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2020 Rev. 3 FDB86569F085/DFDB86569 F085 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GS I Drain Current Continuous (V = 10 V) (Note 1) T = 25C 80 A D GS C Pulsed Drain Current T = 25C See Figure 4 A C E Single Pulse Avalanche Energy (Note 2) 41 mJ AS P Power Dissipation (T = 25C) 94 W D C Derate Above 25C 0.63 W/C T , T Operating and Storage Temperature 55 to +175 C J STG R Thermal Resistance Junction to Case 1.6 C/W JC R Maximum Thermal Resistance, Junction to Ambient (Note 3) 43 C/W JA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 15 H, I = 74 A, V = 60 V during inductor charging and V = 0 V during time in avalanche. J AS DD DD 3. R is the sum of the junctiontocase and casetoambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity 2 FDB86569 FDB86569F085 D PAK (TO263) 330 mm 24 mm 800 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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