FDB039N06 N-Channel PowerTrench MOSFET March 2013 FDB039N06 N-Channel PowerTrench MOSFET 60 V, 174 A, 3.9 m Features General Description R = 2.95 m ( Typ.) V = 10 V, I = 75 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductor s advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching performance. Low Gate Charge High Performance Trench Technology for Extremely Low Applications R DS(on) Synchronous Rectification for ATX / Server / Telecom PSU High Power and Current Handling Capability Battery Protection Circuit RoHS Compliant Motor drives and Uninterruptible Power Supplies Renewable system D D G 2 D -PAK G S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDB039N06 Unit V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GSS o -Continuous (T = 25 C, Silicion Limited) 174* C o I Drain Current -Continuous (T = 100 C, Silicion Limited) 123* A D C o -Continuous (T = 25 C, Package Limited) 120 C I Drain Current - Pulsed (Note 1) 696 A DM E Single Pulsed Avalanche Energy (Note 2) 872 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns o (T = 25 C) 231 W C P Power Dissipation D o o - Derate above 25C1.54W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDB039N06 Unit R Thermal Resistance, Junction to Case, Max. 0.65 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. 40 2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB039N06 Rev. C1 FDB039N06 N-Channel PowerTrench MOSFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB039N06 FDB039N06 TO-263 Tube - 50 o Electrical Characteristics T = 25 C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics o BV Drain to Source Breakdown Voltage I = 250A, V = 0V, T = 25C60 - - V DSS D GS C BV Breakdown Voltage Temperature DSS o o I = 250A, Referenced to 25 C - 0.04 - V/ C D T Coefficient J V = 60V, V = 0V - - 1 DS GS I Zero Gate Voltage Drain Current A DSS o V = 60V, V = 0V, T = 150 C - - 500 DS GS C I Gate to Body Leakage Current V = 20V, V = 0V - - 100 nA GSS GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250A2.53.54.5V GS(th) GS DS D R Static Drain to Source On Resistance V = 10V, I = 75A - 2.95 3.9 m DS(on) GS D g Forward Transconductance V = 10V, I = 75A - 169 - S FS DS D Dynamic Characteristics C Input Capacitance - 6190 8235 pF iss V = 25V, V = 0V DS GS C Output Capacitance - 900 1195 pF oss f = 1MHz C Reverse Transfer Capacitance - 385 580 pF rss Q Total Gate Charge at 10V - 102 133 nC g(tot) V = 48V, I = 75A DS D Q Gate to Source Gate Charge V = 10V - 32 - nC gs GS (Note 4) Q Gate to Drain Miller Charge - 32 - nC gd Switching Characteristics t Turn-On Delay Time -30 70 ns d(on) V = 30V, I = 75A t Turn-On Rise Time - 40 90 ns DD D r V = 10V, R = 4.7 GS GEN t Turn-Off Delay Time - 55 120 ns d(off) t Turn-Off Fall Time (Note 4) - 24 58 ns f Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 174 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 696 A SM V Drain to Source Diode Forward Voltage V = 0V, I = 75A - - 1.3 V SD GS SD t Reverse Recovery Time -41 - ns V = 0V, I = 75A rr GS SD dI /dt = 100A/s Q Reverse Recovery Charge - 47 - nC F rr Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.31mH, I = 75A, V = 50V, R = 25, Starting T = 25C AS DD G J 3: I 75A, di/dt 200A/s, V BV , Starting T = 25 SD DD DSS J 4: Essentially Independent of Operating Temperature Typical Characteristics 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FDB039N06 Rev. C1