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V = 10 V, I = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ductors advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining superior switching performance. Low Gate Charge High Performance Trench Technology for Extremely Low Applications R DS(on) Synchronous Rectification for ATX / Server / Telecom PSU High Power and Current Handling Capability Battery Protection Circuit RoHS Compliant Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter D D G G 2 S D -PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDB047N10 Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GSS o 164* A Drain Current - Continuous (T = 25 C, Silicon Limited) C o I - Continuous (T = 100 C, Silicon Limited) 116* A D C o - Continuous (T = 25 C, Package Limited) C 120 A I Drain Current - Pulsed (Note 1) 656* A DM E Single Pulsed Avalanche Energy (Note 2) 1153 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 375 W C P Power Dissipation D o o - Derate Above 25C2.5W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDB047N10 Unit R Thermal Resistance, Junction to Case, Max. 0.4 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 C/W R JA 2 Pad of 2-oz Copper), Max. 40 Thermal Resistance, Junction to Ambient (1 in 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDB047N10 Rev. C2