DATA SHEET www.onsemi.com MOSFET N-Channel, V R MAX I MAX DSS DS(ON) D POWERTRENCH 100 V 3.5 m 10 V 214 A* *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120 A. 100 V, 214 A, 3.5 m D FDB035N10A G Description S This NChannel MOSFET is produced using onsemis advance 2 D PAK3 (TO263, 3LEAD) POWERTRENCH process that has been tailored to minimize the CASE 418AJ on state resistance while maintaining superior switching performance. Features MARKING DIAGRAM R = 3.0 m ( Typ.) V = 10 V, I = 75 A DS(on) GS D Fast Switching Speed Low Gate Charge, Q = 89 nC ( Typ.) Y&Z&3&K G FDB High Performance Trench Technology for Extremely Low R DS(on) 035N10A High Power and Current Handling Capability RoHS Compliant Applications Y = Logo Synchronous Rectification for ATX / Server / Telecom PSU &Z = Assembly Plant Code Battery Protection Circuit &3 = 3Digit Date Code Format &K = 2Digits Lot Run Traceability Code Motor Drives and Uninterruptible Power Supplies FDB035N10A = Device Code Micro Solar Inverter D G S NChannel ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: January, 2022 Rev. 3 FDB035N10A/DFDB035N10A MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FDB035N10A Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GSS I Drain Current A Continuous (T = 25C, Silicon Limited) 214* D C Continuous (T = 100C, Silicon Limited) 151* C Continuous (T = 25C, Package Limited) 120 C I Drain Current Pulsed (Note 1) 856 A DM E Single Pulsed Avalanche Energy (Note 2) 658 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25C) 333 W D C Derate Above 25C 2.22 W/C T , T Operating and Storage Temperature Range 55 to +175 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120 A. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. Starting T = 25C, L = 1 mH, I = 36.3 A. J AS 3. I 75 A, di/dt 200 A/ s, V BV , starting T = 25C. SD DD DSS J THERMAL CHARACTERISTICS Symbol Parameter FDB035N10A Unit C/W R Thermal Resistance, Junction to Case, Max. 0.45 JC R Thermal Resistance, Junction to Ambient (Minimum Pad of 2 oz Copper), Max. 62.5 JA 2 Thermal Resistance, Junction to Ambient (1 in Pad of 2oz Copper), Max. 40 www.onsemi.com 2