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R = 0.245 SuperFET II MOSFET is Fairchild Semiconductors brand-new DS(on) high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Q = 58 nC) g charge balance technology for outstanding low on-resistance Low E (Typ. 5.6 uJ 400 V) oss and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfor- Low Effective Output Capacitance (Typ. C = 240 pF) oss(eff.) mance, dv/dt rate and higher avalanche energy. Consequently, 100% Avalanche Tested SuperFET II MOSFET is very suitable for the switching power RoHS Compliant applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. ESD Improved Capability Applications AC-DC Power Supply LED Lighting D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCPF290N80 Unit V Drain to Source Voltage 800 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f >1 Hz) 30 o - Continuous (T = 25 C) 17* C I Drain Current A D o - Continuous (T = 100 C) 10.8* C I Drain Current - Pulsed (Note 1) 42* A DM E Single Pulsed Avalanche Energy (Note 2) 882 mJ AS I Avalanche Current (Note 1) 3.4 A AR E Repetitive Avalanche Energy (Note 1) 2.12 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 40 W C P Power Dissipation D o o - Derate Above 25C0.32W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Unit FCPF290N80 R Thermal Resistance, Junction to Case, Max. 3.15 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCPF290N80 Rev. 1.1