X-On Electronics has gained recognition as a prominent supplier of FCPF380N60E_F152 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCPF380N60E_F152 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCPF380N60E_F152 ON Semiconductor

Name: FCPF380N60E_F152
Brand: ON Semiconductor
SKU: FCPF380N60EF152_ON Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

FCPF380N60E_F152 electronic component of ON Semiconductor

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Part No.	FCPF380N60E_F152
Manufacturer:	ON Semiconductor
Category:	MOSFETs
Description:	Fairchild Semiconductor MOSFET 650V, 380mOhm SuperFET II MOSFET
Datasheet:	FCPF380N60E_F152 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

19: USD 0.3769 ea
Line Total: USD 7.16

Availability - 0

MOQ: 19 Multiples: 19
Pack Size: 19

FCPF380N60E_F152 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 28 Nov to Wed. 04 Dec MOQ : 1 Multiples : 1	1 : USD 0.3769

0 Ship by Thu. 28 Nov to Wed. 04 Dec MOQ : 19 Multiples : 19	19 : USD 0.3769

We are delighted to provide the FCPF380N60E_F152 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCPF380N60E_F152 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

FCPF380N60E F152 N-Channel MOSFET July 2013 FCPF380N60E F152 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductor s first gen- J eration of high voltage super-junction (SJ) MOSFET family that is Max. R = 380 m DS(on) utilizing charge balance technology for outstanding low on-resis- Ultra Low Gate Charge (Typ. Q = 34 nC) tance and lower gate charge performance. This advanced tech- g nology is tailored to minimize conduction loss, provide superior Low Effective Output Capacitance (Typ. C .eff = 97 pF) oss switching performance, and withstand extreme dv/dt rate and 100% Avalanche Tested higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system minia- turization and higher efficiency. Aplications LCD / LED / PDP TV Lighting Solar Inverter AC-DC Power Supply D G TO-220F G D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FCPF380N60E F152 Unit V Drain to Source Voltage 600 V DSS - DC 20 V V Gate to Source Voltage GSS - AC (f > 1Hz) 30 V o -Continuous (T = 25 C) 10.2* C I Drain Current A D o -Continuous (T = 100 C) 6.4* C I Drain Current - Pulsed (Note 1) 30.6* A DM E Single Pulsed Avalanche Energy (Note 2) 211.6 mJ AS I Avalanche Current (Note 1) 2.3 A AR E Repetitive Avalanche Energy (Note 1) 1.06 mJ AR Peak Diode Recovery dv/dt (Note 3) 20 dv/dt V/ns MOSFET dv/dt 100 o (T = 25 C) 31 W C P Power Dissipation D o o - Derate above 25C0.25W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Unit FCPF380N60E F152 R Thermal Resistance, Junction to Case 4 JC o R Thermal Resistance, Case to Heat Sink (Typical) 0.5 C/W CS R Thermal Resistance, Junction to Ambient 62.5 JA 2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCPF380N60E F152 Rev. C0 FCPF380N60E F152 N-Channel MOSFET Package Marking and Ordering Information Device Marking Device Package Eco Status Packaging Type Quantity FCPF380N60E FCPF380N60E F152 TO-220F Green Tube 50 For Fairchild s definition ofgree Eco Status, please visit:

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer ON Semiconductor ON Semiconductor
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 10.2 A 10.2 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 380 mOhms 380 mOhms
Transistor Polarity n - channel n - channel
Vgs th - Gate-Source Threshold Voltage 3.5 V 3.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 31 W 31 W
Mounting Style through hole through hole
Package / Case TO - 220 - 3 TO - 220 - 3
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 20 v , 30 V 20 v , 30 V
Qg - Gate Charge 34 nC 34 nC
Channel Mode enhancement enhancement
Configuration single single
Series fcpf380n60 fcpf380n60
Transistor Type 1 n - channel 1 n - channel
Brand Fairchild Semiconductor Fairchild Semiconductor
Forward Transconductance - Min 10 s 10 s
Fall Time 10 ns 10 ns
Rise Time 9 ns 9 ns
Factory Pack Quantity : 50 50
Typical Turn-Off Delay Time 64 ns 64 ns
Typical Turn-On Delay Time 17 ns 17 ns