X-On Electronics has gained recognition as a prominent supplier of FCPF380N60E_F152 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCPF380N60E_F152 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCPF380N60E_F152 ON Semiconductor

FCPF380N60E_F152 electronic component of ON Semiconductor
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Part No.FCPF380N60E_F152
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET 650V, 380mOhm SuperFET II MOSFET
Datasheet: FCPF380N60E_F152 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
19: USD 0.3769 ea
Line Total: USD 7.16 
Availability - 0
MOQ: 19  Multiples: 19
Pack Size: 19
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3769

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 19
Multiples : 19
19 : USD 0.3769

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the FCPF380N60E_F152 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCPF380N60E_F152 and other electronic components in the MOSFETs category and beyond.

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FCPF380N60E F152 N-Channel MOSFET July 2013 FCPF380N60E F152 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductor s first gen- J eration of high voltage super-junction (SJ) MOSFET family that is Max. R = 380 m DS(on) utilizing charge balance technology for outstanding low on-resis- Ultra Low Gate Charge (Typ. Q = 34 nC) tance and lower gate charge performance. This advanced tech- g nology is tailored to minimize conduction loss, provide superior Low Effective Output Capacitance (Typ. C .eff = 97 pF) oss switching performance, and withstand extreme dv/dt rate and 100% Avalanche Tested higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system minia- turization and higher efficiency. Aplications LCD / LED / PDP TV Lighting Solar Inverter AC-DC Power Supply D G TO-220F G D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FCPF380N60E F152 Unit V Drain to Source Voltage 600 V DSS - DC 20 V V Gate to Source Voltage GSS - AC (f > 1Hz) 30 V o -Continuous (T = 25 C) 10.2* C I Drain Current A D o -Continuous (T = 100 C) 6.4* C I Drain Current - Pulsed (Note 1) 30.6* A DM E Single Pulsed Avalanche Energy (Note 2) 211.6 mJ AS I Avalanche Current (Note 1) 2.3 A AR E Repetitive Avalanche Energy (Note 1) 1.06 mJ AR Peak Diode Recovery dv/dt (Note 3) 20 dv/dt V/ns MOSFET dv/dt 100 o (T = 25 C) 31 W C P Power Dissipation D o o - Derate above 25C0.25W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Unit FCPF380N60E F152 R Thermal Resistance, Junction to Case 4 JC o R Thermal Resistance, Case to Heat Sink (Typical) 0.5 C/W CS R Thermal Resistance, Junction to Ambient 62.5 JA 2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCPF380N60E F152 Rev. C0 FCPF380N60E F152 N-Channel MOSFET Package Marking and Ordering Information Device Marking Device Package Eco Status Packaging Type Quantity FCPF380N60E FCPF380N60E F152 TO-220F Green Tube 50 For Fairchild s definition ofgree Eco Status, please visit:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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