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R = 340 m SuperFET II MOSFET is Fairchild Semiconductors brand-new DS(on) high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Q = 43 nC) g charge balance technology for outstanding low on-resistance Low E (Typ. 4.1 uJ 400 V) oss and lower gate charge performance. This technology is tailored Low Effective Output Capacitance (Typ. C = 138 pF) oss(eff.) to minimize conduction loss, provide superior switching perfor- 100% Avalanche Tested mance, dv/dt rate and higher avalanche energy. In addition, RoHS Compliant internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very ESD Improved Capability suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power appli- Applications cations. AC-DC Power Supply LED Lighting D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCPF400N80Z Unit V Drain to Source Voltage 800 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f >1 Hz) 30 o - Continuous (T = 25 C) 14* C I Drain Current A D o - Continuous (T = 100 C) 8.9* C I Drain Current - Pulsed (Note 1) 33* A DM E Single Pulsed Avalanche Energy (Note 2) 339 mJ AS I Avalanche Current (Note 1) 2.2 A AR E Repetitive Avalanche Energy (Note 1) 0.36 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 35.7 W C P Power Dissipation D o o - Derate Above 25C0.29W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature, with heatsink. Thermal Characteristics Symbol Parameter FCPF400N80Z Unit R Thermal Resistance, Junction to Case, Max. 3.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCPF400N80Z Rev. 1.4