Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDA28N50F N-Channel UniFET FRFET MOSFET May 2014 FDA28N50F TM N-Channel UniFET FRFET MOSFET 500 V, 28 A, 175 m Features Description TM R = 140 m (Typ.) V = 10 V, I = 14 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 80 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 38 pF) rss provide better switching performance and higher avalanche 100% Avalanche Tested energy strength. The body diodes reverse recovery perfor- mance of UniFET FRFET MOSFET has been enhanced by Improved dv/dt Capability lifetime control. Its trr is less than 100nsec and the reverse dv/dt RoHS Compliant immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove Applications additional component and improve system reliability in certain applications in which the performance of MOSFETs body diode PDP TV is significant. This device family is suitable for switching power Uninterruptible Power Supply converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- AC-DC Power Supply lasts. D G G D TO-3PN S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDA28N50F Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 28 C I Drain Current A D o - Continuous (T = 100 C) 17 C I Drain Current - Pulsed (Note 1) 112 A DM E Single Pulsed Avalanche Energy (Note 2) 2352 mJ AS I Avalanche Current (Note 1) 28 A AR E Repetitive Avalanche Energy (Note 1) 31 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 310 W C P Power Dissipation D o o - Derate Above 25C2.5W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter FDA28N50F Unit R Thermal Resistance, Junction to Case, Max. 0.4 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 40 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDA28N50F Rev. C2