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SuperFET II MOSFET is Fairchild Semiconductors brand-new DS(on) high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Q = 27 nC) g charge balance technology for outstanding low on-resistance Low E (Typ. 2.8 uJ 400V) and lower gate charge performance. This technology is tailored oss to minimize conduction loss, provide superior switching Low Effective Output Capacitance (Typ. C = 124 pF) oss(eff.) performance, dv/dt rate and higher avalanche energy. In 100% Avalanche Tested addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II RoHS Compliant MOSFET is very suitable for the switching power applications ESD Improved Capability such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. Applications AC - DC Power Supply LED Lighting D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCPF650N80Z Unit V Drain to Source Voltage 800 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C) 10* C I Drain Current A D o - Continuous (T = 100 C) 6.3* C I Drain Current - Pulsed (Note 1) 24* A DM E Single Pulsed Avalanche Energy (Note 2) 204 mJ AS I Avalanche Current (Note 1) 1.6 A AR E Repetitive Avalanche Energy (Note 1) 0.305 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 30.5 W C P Power Dissipation D o o - Derate Above 25C0.24W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Drain current limited by maximum junction temperature, with heatsink. Thermal Characteristics Symbol Parameter Unit FCPF650N80Z R Thermal Resistance, Junction to Case, Max. 4.1 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCPF650N80Z Rev. 1.2