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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCPF220N80 N-Channel SuperFET II MOSFET May 2015 FCPF220N80 N-Channel SuperFET II MOSFET 800 V, 23 A, 220 m Features Description Typ. R = 188 m SuperFET II MOSFET is Fairchild Semiconductors brand-new DS(on) high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Q = 78 nC) g charge balance technology for outstanding low on-resistance Low E (Typ. 7.5 uJ 400 V) oss and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfor- Low Effective Output Capacitance (Typ. C = 304 pF) oss(eff.) mance, dv/dt rate and higher avalanche energy. Consequently, 100% Avalanche Tested SuperFET II MOSFET is very suitable for the switching power RoHS Compliant applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. ESD Improved Capability Applications AC-DC Power Supply LED Lighting D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCPF220N80 Unit V Drain to Source Voltage 800 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f >1 Hz) 30 o - Continuous (T = 25 C) 23* C I Drain Current A D o - Continuous (T = 100 C) 14.6* C I Drain Current - Pulsed (Note 1) 57* A DM E Single Pulsed Avalanche Energy (Note 2) 645 mJ AS I Avalanche Current (Note 1) 4.6 A AR E Repetitive Avalanche Energy (Note 1) 27.8 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 44 W C P Power Dissipation D o o - Derate Above 25C0.35W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Unit FCPF220N80 R Thermal Resistance, Junction to Case, Max. 2.8 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCPF220N80 Rev. 1.1