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FCP20N60 / FCPF20N60 N-Channel SuperFET MOSFET August 2014 FCP20N60 / FCPF20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 m Features Description SuperFET MOSFET is Fairchild Semiconductors first genera- 650V T = 150C J tion of high voltage super-junction (SJ) MOSFET family that is Typ. R = 150 m DS(on) utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Q = 75 nC ) g resistance and lower gate charge performance. This technology Low Effective Output Capacitance (Typ. C = 165 pF ) oss(eff.) is tailored to minimize conduction loss, provide superior switch- 100% Avalanche Tested ing performance, dv/dt rate and higher avalanche energy. Con- sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD Applications TV power, ATX power and industrial power applications. Solar Inverter AC-DC Power Supply D G G D G S D TO-220 TO-220F S S Absolute Maximum Ratings Symbol Parameter FCP20N60 FCPF20N60 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25C) 20 20* A D C - Continuous (T = 100C) 12.5 12.5* A C (Note 1) I Drain Current - Pulsed A DM 60 60* V Gate-Source Voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 690 mJ AS (Note 1) I Avalanche Current 20 A AR (Note 1) E Repetitive Avalanche Energy 20.8 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 208 39 W D C - Derate Above 25C 1.67 0.3 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering, L 300 C 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP20N60 FCPF20N60 Unit R Thermal Resistance, Junction-to-Case 0.6 3.2 C/W JC R Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W JA 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCP20N60 / FCPF20N60 Rev. C0