SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary N-Channel V 30 V DS Enhancement mode R 10 mW DS(on) I 30 A Logic Level D PG-TO252-3 Low On-Resistance R DS(on) Excellent Gate Charge x R product (FOM) DS(on) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Type Package Marking SPD30N03S2L-10G PG-TO252-3 2N03L10 Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit 1) A Continuous drain current I D T =25C 30 C 30 Pulsed drain current I 120 D puls T =25C C 150 mJ Avalanche energy, single pulse E AS I =30 A , V =25V, R =25W D DD GS 2) E 10 Repetitive avalanche energy, limited by T AR jmax Reverse diode dv/dt dv/dt 6 kV/s I =30A, V =24V, di/dt=200A/s, T =175C S DS jmax Gate source voltage V V 20 GS Power dissipation P 100 W tot T =25C C C Operating and storage temperature T , T -55... +175 j stg IEC climatic category DIN IEC 68-1 55/175/56 Page 1 02-09-2008SPD30N03S2L-10 G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics R - 1 1.5 K/W Thermal resistance, junction - case thJC R - - 100 Thermal resistance, junction - ambient, leaded thJA SMD version, device on PCB: R thJA min. footprint - - 75 2 3) 6 cm cooling area - - 50 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V 30 - - V (BR)DSS V =0V, I =1mA GS D 1.2 1.6 2 Gate threshold voltage, V = V V GS DS GS(th) I =50A D A Zero gate voltage drain current I DSS V =30V, V =0V, T =25C - 0.01 1 DS GS j V =30V, V =0V, T =125C - 10 100 DS GS j - 1 100 nA Gate-source leakage current I GSS V =20V, V =0V GS DS - 11.2 14.6 Drain-source on-state resistance R W DS(on) V =4.5V, I =30A GS D - 7.8 10 Drain-source on-state resistance R mW DS(on) V =10V, I =30 GS D 1 Current limited by bondwire with an R = 1.5K/W the chip is able to carry I = 76A at 25C, for detailed thJC D information see app.-note ANPS071E available at www.infineon.com/optimos 2 Defined by design. Not subject to production test. 3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 02-09-2008