STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features % V T R DS J DS(on) Order code I P D TOT max. max. STD10NM60N 70 W STF10NM60N 25 W DPAK TO-220FP 650 V 0.55 10 A STP10NM60N % 70 W STU10NM60N % 100% avalanche tested Low input capacitance and gate charge IPAK TO-220 Low gate input resistance Figure 1. Internal schematic diagram Applications Switching applications % 7 Description These devices are N-channel Power MOSFETs developed using the second generation of * MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is 6 therefore suitable for the most demanding high efficiency converters. 0 Y Table 1. Device summary Order code Marking Package Packing STD10NM60N 10NM60N DPAK Tape and reel STF10NM60N 10NM60N TO-220FP Tube STP10NM60N 10NM60N TO-220 Tube STU10NM60N 10NM60N IPAK Tube December 2015 DocID028726 Rev 1 1/28 This is information on a product in full production. www.st.com 7 7 7 Contents STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package information 10 4.1 STD10NM60N, DPAK (TO-252) package information . 10 4.2 STF10NM60N, TO-220FP package information . 17 4.3 STP10NM60N, TO-220 package information 19 4.4 STU10NM60N, IPAK (TO-251) 21 5 Packing information 25 6 Revision history . 27 2/28 DocID028726 Rev 1