X-On Electronics has gained recognition as a prominent supplier of IAUC70N08S5N074ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IAUC70N08S5N074ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IAUC70N08S5N074ATMA1 Infineon

IAUC70N08S5N074ATMA1 electronic component of Infineon
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Part No.IAUC70N08S5N074ATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFET_75V 120V
Datasheet: IAUC70N08S5N074ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2765 ea
Line Total: USD 1.28 
Availability - 4032
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4032
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2765
10 : USD 1.0522
100 : USD 0.8475
500 : USD 0.7394
1000 : USD 0.6187
2500 : USD 0.6141
5000 : USD 0.5911
10000 : USD 0.5693
25000 : USD 0.5681

   
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We are delighted to provide the IAUC70N08S5N074ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IAUC70N08S5N074ATMA1 and other electronic components in the MOSFETs category and beyond.

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IAUC70N08S5N074 OptiMOS -5 Power-Transistor Product Summary V 80 V DS R 7.4 m W DS(on) I 70 A D Features N-channel - Enhancement mode PG-TDSON-8 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 1 100% Avalanche tested 1 Type Package Marking PG-TDSON-8 5N08074 IAUC70N08S5N074 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 70 A D C GS T =100C, C 47 1) V =10V GS 1) I T =25C 280 Pulsed drain current D,pulse C 1) E I =35A 57 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 70 A AS V Gate source voltage - 20 V GS Power dissipation P T =25C 83 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2018-07-24IAUC70N08S5N074 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics R Thermal resistance, junction - case - - - 1.8 K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0V, GS V Drain-source breakdown voltage 80 - - V (BR)DSS I =1mA D V V =V , I =36A Gate threshold voltage 2.2 3 3.8 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =80V, V =0V, DS GS - 1 20 1) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =6V, I =18A Drain-source on-state resistance - 9.1 10.6 m DS(on) GS D V =10V, I =35A - 6.6 7.4 GS D 1) R - 1.2 - W Gate resistance G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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