IAUC70N08S5N074 OptiMOS -5 Power-Transistor Product Summary V 80 V DS R 7.4 m W DS(on) I 70 A D Features N-channel - Enhancement mode PG-TDSON-8 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 1 100% Avalanche tested 1 Type Package Marking PG-TDSON-8 5N08074 IAUC70N08S5N074 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 70 A D C GS T =100C, C 47 1) V =10V GS 1) I T =25C 280 Pulsed drain current D,pulse C 1) E I =35A 57 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 70 A AS V Gate source voltage - 20 V GS Power dissipation P T =25C 83 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2018-07-24IAUC70N08S5N074 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics R Thermal resistance, junction - case - - - 1.8 K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0V, GS V Drain-source breakdown voltage 80 - - V (BR)DSS I =1mA D V V =V , I =36A Gate threshold voltage 2.2 3 3.8 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =80V, V =0V, DS GS - 1 20 1) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =6V, I =18A Drain-source on-state resistance - 9.1 10.6 m DS(on) GS D V =10V, I =35A - 6.6 7.4 GS D 1) R - 1.2 - W Gate resistance G