X-On Electronics has gained recognition as a prominent supplier of IXTA36P15P TRL MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTA36P15P TRL MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTA36P15P TRL IXYS

IXTA36P15P TRL electronic component of IXYS
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See Product Specifications
Part No.IXTA36P15P TRL
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET -36.0 Amps -150V 0.110 Rds
Datasheet: IXTA36P15P TRL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.5975 ea
Line Total: USD 9.6 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 9.5975
10 : USD 6.3069
25 : USD 6.0169
100 : USD 5.2195
500 : USD 4.5463

   
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We are delighted to provide the IXTA36P15P TRL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTA36P15P TRL and other electronic components in the MOSFETs category and beyond.

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TM PolarP IXTA36P15P V = - 150V DSS IXTP36P15P I = - 36A Power MOSFETs D25 IXTQ36P15P R 110m DS(on) P-Channel Enhancement Mode IXTH36P15P Avalanche Rated TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S G S D D (Tab) S D (Tab) D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 150 V DSS J V T = 25C to 150C, R = 1M - 150 V DGR J GS V Continuous 20 V GSS G V Transient 30 V D GSM S D (Tab) I T = 25C - 36 A D25 C I T = 25C, Pulse Width Limited by T - 90 A G = Gate D = Drain DM C JM S = Source Tab = Drain I T = 25C - 36 A A C E T = 25C 1.5 J AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J Features P T = 25C 300 W D C z T -55 ... +150 C International Standard Packages J T 150 C z TM JM Rugged PolarP Process T -55 ... +150 C z stg Avalanche Rated z Low Package Inductance T 1.6mm (0.062 in.) from Case for 10s 300 C L z T Plastic Body for 10s 260 C Fast Intrinsic Diode SOLD z Dynamic dv/dt Rated M Mounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.in. d z Low R and Q DS(ON) G F Mounting Force (TO-263) 10..65/2.2..14.6 N/lb. C z Low Drain-to-Tab Capacitance Weight TO-263 2.5 g TO-220 3.0 g Advantages TO-3P 5.5 g TO-247 6.0 g z Easy to Mount z Space Savings z Symbol Test Conditions Characteristic Values High Power Density (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250 A - 150 V DSS GS D z V V = V , I = - 250A - 2.5 - 4.5 V High-Side Switching GS(th) DS GS D z Push Pull Amplifiers I V = 20V, V = 0V 100 nA GSS GS DS z DC Choppers z I V = V , V = 0V -10 A Automatic Test Equipment DSS DS DSS GS z T = 125C - 250 A Current Regulators J R V = -10V, I = 0.5 I , Note 1 110 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS99791D(01/13)IXTA36P15P IXTP36P15P IXTQ36P15P IXTH36P15P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 11 19 S fs DS D D25 C 3100 pF iss C V = 0V, V = - 25V, f = 1MHz 610 pF oss GS DS C 100 pF rss t 21 ns d(on) Resistive Switching Times t 31 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 36 ns d(off) R = 3.3 (External) G t 15 ns f Q 55 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 20 nC gs GS DS DSS D D25 Q 18 nC gd R 0.42 C/W thJC R (TO-3P, TO-247) 0.21 C/W thCS (TO-220) 0.50 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 36 A S GS I Repetitive, Pulse Width Limited by T -140 A SM JM V I = -18A, V = 0V, Note 1 - 3.3 V SD F GS t 228 ns rr I = -18A, -di/dt = -100A/s F Q 2.0 C RM V = - 75V, V = 0V I R GS -17.6 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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