RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 z Structure z External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 z Features (3) 1) Low On-resistance. 2) High speed switching. (2) (1) 0.95 0.95 0.15 1.9 (1)Source zApplications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol : KU z Packaging specifications and hFE z Inner circuit (3) Package Taping Type Code T146 Basic ordering unit (pieces) 3000 RHK005N03 (2) 2 (1) Source 1 (2) Gate (3) Drain (1) 1 ESD PROTECTION DIODE 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 500 mA Drain current 1 Pulsed IDP 2.0 A 2 Total power dissipation P 200 mW D Channel temperature Tch 150 C Tstg 55 to +150 C Range of storage temperature 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 625 C/W Each terminal mounted on a recommended land 1/2 1.6 2.8 0.3Min.RHK005N03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 350 550 m I = 500mA, V = 10V D GS Static drain-source on-state RDS (on) 510 720 m ID= 500mA, VGS= 4.5V resistance 600 840 m ID= 500mA, VGS= 4V Forward transfer admittance Y 0.5 SV = 10V, I = 500mA fs DS D Input capacitance Ciss 45 pF VDS= 10V Output capacitance Coss 20 pF VGS=0V Reverse transfer capacitance Crss 10 pF f=1MHz Turn-on delay time t 10 ns VDD 15V d (on) ID= 250mA Rise time tr 10 ns VGS= 10V Turn-off delay time td (off) 15 ns RL=60 Fall time t 30 ns RG=10 f Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 0.16A, V =0V S GS 2/2