RHP030N03T100 ROHM

RHP030N03 4V Drive Nch MOSFET Data Sheet Structure Dimensions (Unit : mm) Silicon N-channel MOSFET MPT3 4.5 1.5 1.6 Features 1) Low On-resistance. 2) 4V drive. (1) (2) (3) 0.4 0.5 0.4 0.4 Applications 1.5 1.5 Switching 3.0 (1)Gate (2)Drain (3)Source Abbreviated symbol : KZ Packaging specifications Inner circuit Package Taping (1) Gate Type Code T100 (2) Drain Basic ordering unit (pieces) 1000 (3) Source RHP030N03 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous I 3 A D Drain current 1 Pulsed IDP 10 A Continuous IDR 3 A Reverse drain current 1 Pulsed IDRP 10 A 500 mW Total power dissipation PD 2 2 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 When mounted on a 40400.7mm ceramic board Thermal resistance Parameter Symbol Limits Unit 250 C/W Channel to ambient Rth(ch-a) 62.5 C/W When mounted on a 40400.7mm ceramic board www.rohm.com 1/6 c 2014 ROHM Co., Ltd. All rights reserved. 2014.08 - Rev.B 1.0 2.5 0.5 4.0 RHP030N03 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 30V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 90 120 m ID= 3A, VGS= 10V Static drain-source on-state RDS (on) resistance 160 210 m ID= 3A, VGS= 4V Forward transfer admittance Yfs 2.0 SVDS= 10V, ID= 3A Input capacitance C 160 pF V = 10V iss DS Output capacitance Coss 90 pF VGS=0V Reverse transfer capacitance Crss 27 pF f=1MHz Turn-on delay time t 7 ns VDD 15V d (on) ID= 1.5A Rise time tr 11 ns VGS= 10V Turn-off delay time td (off) 15 ns RL=10 Fall time tf 4.5 ns RG=10 Total gate charge Qg 6.5 nC VDD 15V Gate-source charge Q 1.0 nC V = 10V gs GS Gate-drain charge Qgd1.5 nC ID= 3A Pulsed www.rohm.com 2/3 c 2014 ROHM Co., Ltd. All rights reserved. 2014.08 - Rev.B