X-On Electronics has gained recognition as a prominent supplier of RHP020N06T100 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RHP020N06T100 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RHP020N06T100 ROHM

Hot RHP020N06T100 electronic component of ROHM
RHP020N06T100 ROHM
RHP020N06T100 MOSFETs
RHP020N06T100  Semiconductors

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Part No. RHP020N06T100
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 60 V 2A (Ta) 500mW (Ta) Surface Mount MPT3
Datasheet: RHP020N06T100 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4261 ea
Line Total: USD 2.13 
Availability - 77
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
77
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 5
Multiples : 5
5 : USD 0.4261
50 : USD 0.3337
150 : USD 0.2268
1000 : USD 0.1886
2000 : USD 0.1716
5000 : USD 0.1615

3600
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.6863
10 : USD 0.6775
100 : USD 0.4191
500 : USD 0.341
1000 : USD 0.2882
2000 : USD 0.2805
25000 : USD 0.2772

20920
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 178
Multiples : 1
178 : USD 0.5516
500 : USD 0.4358

92886
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 189
Multiples : 1
189 : USD 0.3445
500 : USD 0.291
1000 : USD 0.273
4000 : USD 0.25
8000 : USD 0.2375
16000 : USD 0.2235
32000 : USD 0.2187
64000 : USD 0.211

970
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 180
Multiples : 1
180 : USD 0.5516
500 : USD 0.4358

769
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 178
Multiples : 1
178 : USD 0.5966
250 : USD 0.5727
500 : USD 0.552

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the RHP020N06T100 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RHP020N06T100 and other electronic components in the MOSFETs category and beyond.

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+ + + + 4V Drive Nch MOSFET RHP020N06 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET MPT3 4.5 1.5 1.6 z Features 1) Low On-resistance. (1) (2) (3) 2) High speed switching. 0.4 3) Wide SOA. 0.5 0.4 0.4 1.5 1.5 3.0 (1)Gate (2)Drain (3)Source Abbreviated symbol : LR zApplications Switching z Packaging specifications and hFE z Inner circuit DRAIN Package Taping Type Code T100 Basic ordering unit (pieces) 1000 RHP020N06 GATE 2 1 SOURCE 1 ESD PROTECTION DIODE 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 60 V DSS Gate-source voltage VGSS 20 V Continuous ID 2 A Drain current 1 Pulsed I 8 A DP Continuous IS 2 A Source current 1 Pulsed ISP 8 A 500 mW Total power dissipation PD 2 2 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 When mounted on a 40 40 0.7mm ceramic board z Thermal resistance Parameter Symbol Limits Unit 250 C/W Channel to ambient Rth(ch-a) 62.5 C/W When mounted on a 40 40 0.7mm ceramic board www.rohm.com c 2009.03 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 1/4 1.0 2.5 0.5 4.0 RHP020N06 Data Sheet z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS= 20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 60 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 60V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 150 200 m ID= 2A, VGS= 10V Static drain-source on-state R 200 280 m I = 2A, V = 4.5V DS (on) D GS resistance 240 340 m ID= 2A, VGS= 4V Forward transfer admittance Yfs 2.0 SVDS= 10V, ID= 2A Input capacitance C 140 pF V = 10V iss DS Output capacitance Coss 50 pF VGS=0V Reverse transfer capacitance Crss 40 pF f=1MHz Turn-on delay time t 7 ns VDD 30V d (on) ID= 1A Rise time tr 10 ns VGS= 10V Turn-off delay time td (off) 22 ns RL=30 Fall time t 18 ns RG=10 f Total gate charge Qg 7 14 nC VDD 30V Gate-source charge Qgs 1 nC VGS= 10V Gate-drain charge Q 2 nC I = 2A gd D Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 2A, V =0V S GS www.rohm.com c 2009.03 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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