RHP020N06T100 ROHM

+ + + + 4V Drive Nch MOSFET RHP020N06 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET MPT3 4.5 1.5 1.6 z Features 1) Low On-resistance. (1) (2) (3) 2) High speed switching. 0.4 3) Wide SOA. 0.5 0.4 0.4 1.5 1.5 3.0 (1)Gate (2)Drain (3)Source Abbreviated symbol : LR zApplications Switching z Packaging specifications and hFE z Inner circuit DRAIN Package Taping Type Code T100 Basic ordering unit (pieces) 1000 RHP020N06 GATE 2 1 SOURCE 1 ESD PROTECTION DIODE 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 60 V DSS Gate-source voltage VGSS 20 V Continuous ID 2 A Drain current 1 Pulsed I 8 A DP Continuous IS 2 A Source current 1 Pulsed ISP 8 A 500 mW Total power dissipation PD 2 2 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 When mounted on a 40 40 0.7mm ceramic board z Thermal resistance Parameter Symbol Limits Unit 250 C/W Channel to ambient Rth(ch-a) 62.5 C/W When mounted on a 40 40 0.7mm ceramic board www.rohm.com c 2009.03 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 1/4 1.0 2.5 0.5 4.0 RHP020N06 Data Sheet z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS= 20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 60 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 60V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 150 200 m ID= 2A, VGS= 10V Static drain-source on-state R 200 280 m I = 2A, V = 4.5V DS (on) D GS resistance 240 340 m ID= 2A, VGS= 4V Forward transfer admittance Yfs 2.0 SVDS= 10V, ID= 2A Input capacitance C 140 pF V = 10V iss DS Output capacitance Coss 50 pF VGS=0V Reverse transfer capacitance Crss 40 pF f=1MHz Turn-on delay time t 7 ns VDD 30V d (on) ID= 1A Rise time tr 10 ns VGS= 10V Turn-off delay time td (off) 22 ns RL=30 Fall time t 18 ns RG=10 f Total gate charge Qg 7 14 nC VDD 30V Gate-source charge Qgs 1 nC VGS= 10V Gate-drain charge Q 2 nC I = 2A gd D Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 2A, V =0V S GS www.rohm.com c 2009.03 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 2/4