X-On Electronics has gained recognition as a prominent supplier of QST8TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. QST8TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

QST8TR ROHM

Name: QST8TR
Brand: ROHM
SKU: QST8TR_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	QST8TR
Manufacturer:	ROHM
Category:	Bipolar Transistors - BJT
Description:	ROHM Semiconductor Bipolar Transistors - BJT BIPOLAR PNP Vce -12v -1.5A
Datasheet:	QST8TR Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3: USD 0.3487 ea
Line Total: USD 1.05

Availability - 0

MOQ: 3 Multiples: 1
Pack Size: 1

QST8TR More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 22 Nov to Thu. 28 Nov MOQ : 1 Multiples : 1	1 : USD 1.1482 10 : USD 0.7559 100 : USD 0.4636 500 : USD 0.3628 1000 : USD 0.2826

0 Ship by Wed. 20 Nov to Fri. 22 Nov MOQ : 1 Multiples : 1	1 : USD 0.6599 10 : USD 0.4402 100 : USD 0.3098 500 : USD 0.2553 1000 : USD 0.2352 3000 : USD 0.2051 9000 : USD 0.1962

0 Ship by Wed. 20 Nov to Fri. 22 Nov MOQ : 3 Multiples : 1	3 : USD 0.3487 25 : USD 0.2551 83 : USD 0.1899 227 : USD 0.1791

0 Ship by Fri. 22 Nov to Thu. 28 Nov MOQ : 38 Multiples : 1	38 : USD 0.6843 50 : USD 0.2673

We are delighted to provide the QST8TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QST8TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

QST8 Datasheet Middle Power Transistor (-12V /-1.5A) llOutline Parameter Tr1 and Tr2 SOT-457T V -12V CEO SC-95 I -1.5A C TSMT6 llFeatures llInner circuit 1) Collector current is large. 2) Collector saturation voltage is low V -200mV CE(sat) at I = -500mA / I = -25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-457T QST8 2928 TR 180 8 3000 T08 (TSMT6) www.rohm.com 1/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. QST8 Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage -15 V CBO V Collector-emitter voltage -12 V CEO V Emitter-base voltage -6 V EBO I -1.5 A C Collector current *1 I -3 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -15 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -12 - - V CEO C voltage Emitter-base breakdown voltage BV I = -10A -6 - - V EBO E Collector cut-off current I V = -15V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -500mA, I = -25mA - -85 -200 mV CE(sat) C B h DC current gain V = -2V, I = -200mA 270 - 680 - FE CE C V = -2V, I = 200mA, CE E f Transition frequency - 400 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 12 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8mm). *4 900mW per element must not be exceeded. www.rohm.com 2/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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ROHM Semiconductor

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Manufacturer ROHM ROHM
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS - XON Y Y
Mounting Style Smd/Smt Smd/Smt
Package / Case T SMT - 6 T SMT - 6
Transistor Polarity Pnp Pnp
Configuration Dual Dual
Maximum DC Collector Current 1.5 A 1.5 A
Collector- Emitter Voltage VCEO Max - 12 V - 12 V
Collector- Base Voltage VCBO - 15 V - 15 V
Emitter- Base Voltage VEBO - 6 V - 6 V
Collector-Emitter Saturation Voltage - 85 mV - 85 mV
Pd - Power Dissipation 1.25 W 1.25 W
Gain Bandwidth Product fT 400 Mhz 400 Mhz
Maximum Operating Temperature + 150 C + 150 C
Series Qst8 Qst8
Packaging Reel Reel
Dc Current Gain Hfe Max 680 680
Brand Rohm Semiconductor Rohm Semiconductor
Dc Collector/Base Gain Hfe Min 270 270
Factory Pack Quantity : 3000 3000
Height 1.1 mm 1.1 mm
Length 2.9 mm 2.9 mm
Continuous Collector Current - 1.5 A - 1.5 A
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Bjts - Bipolar Transistors Bjts - Bipolar Transistors
Subcategory Transistors Transistors
Taric 8541290000 8541290000