PMPB12UNEX Nexperia

PMPB12UNE 20 V, N-channel Trench MOSFET 12 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Exposed drain pad for excellent thermal conduction Tin-plated 100% solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 11.4 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 7.9 A T = 25 C - 12 16 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .Nexperia PMPB12UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 1 6 2 D drain 7 2 5 3 G gate G 3 4 8 4 S source Transparent top view 5 D drain DFN2020MD-6 (SOT1220) S 6 D drain 017aaa255 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB12UNE DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin SOT1220 small outline package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMPB12UNE 2Y PMPB12UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 April 2016 2 / 16