STF10N80K5 STMicroelectronics

STF10N80K5, STFU10N80K5 N-channel 800 V, 0.470 typ., 9 A MDmesh K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STF10N80K5 800 V 0.600 9 A 30 W STFU10N80K5 Industrys lowest RDS(on) x area Industrys best figure of merit (FoM) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Figure 1: Internal schematic diagram Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STF10N80K5 TO-220FP 10N80K5 Tube STFU10N80K5 TO-220FP ultra narrow leads September 2016 DocID026564 Rev 5 1/17 www.st.com This is information on a product in full production. Contents STF10N80K5, STFU10N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 11 4.1 TO-220FP package information ...................................................... 12 4.2 TO-220FP ultra narrow leads package information ......................... 14 5 Revision history ............................................................................ 16 2/17 DocID026564 Rev 5