STD9HN65M2 STMicroelectronics

STD9HN65M2 N-channel 650 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD9HN65M2 650 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(2, TAB) Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. G(1) Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing S(3) AM15572v1 tab Tape and STD9HN65M2 9HN65M2 DPAK reel October 2015 DocID027601 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STD9HN65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) package information ................................................ 9 4.2 DPAK (TO-252) packing information ............................................... 12 5 Revision history ............................................................................ 14 2/15 DocID027601 Rev 3