STD80N10F7 STMicroelectronics

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE 2 Power MOSFETs in DPAK, TO-220FP, H PAK-2 and TO-220 Datasheet - production data Features TAB V R DS DS(on) 3 Order codes I P D TOT T max 1 Jmax DPAK 3 STD80N10F7 0.01 70 A 85 W 2 1 STF80N10F7 0.01 40 A 30 W TO-220FP 100 V TAB STH80N10F7-2 0.0095 TAB 80 A 110 W STP80N10F7 0.01 2 3 Extremely low gate charge 1 3 2 2 1 Ultra low on-resistance H PAK-2 TO-220 Low gate input resistance Applications Figure 1. Internal schematic diagram Switching applications % 7 % 7 Description th These devices utilize the 7 generation of design rules of STs proprietary STripFET technology, * * with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. 6 6 2 DQG . 7 3 + . 3 % QR 7 2 )3 7 0 Y Table 1. Device summary Order codes Marking Package Packaging STD80N10F7 DPAK Tape and reel STF80N10F7 TO-220FP Tube 80N10F7 2 STH80N10F7-2 H PAK-2 Tape and reel STP80N10F7 TO-220 Tube February 2014 DocID025865 Rev 1 1/25 This is information on a product in full production. www.st.comContents STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 21 6 Revision history . 24 2/25 DocID025865 Rev 1