STD878T4 STMicroelectronics

STD878 STN878 High current, high performance, low voltage NPN transistors Features Very low collector to emitter saturation voltage DC current gain, h >100 4 FE 4 5 A continuous collector current 3 3 2 1 Applications 1 Power management in portable equipment SOT-223 DPAK Voltage regulation in bias supply circuits Switching regulator in battery charger applications Heavy load driver Figure 1. Internal schematic diagram Description The devices are manufactured in low voltage NPN planar technology with base island layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order codes Markings Packages Packaging STD878T4 D878 DPAK Tape and reel STN878 N878 SOT-223 Tape and reel August 2010 Doc ID 13836 Rev 2 1/10 www.st.com 10 Obsolete Product(s) - Obsolete Product(s)Electrical ratings STD878, STN878 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 45 V CBO E V Collector-emitter voltage (I = 0) 30 V CEO B V Emitter-base voltage (I = 0) 6 V EBO C I Collector current 5 A C I Collector peak current (t < 5 ms) 10 A CM P Total dissipation at T = 25 C for STD878 15 C P W TOT Total dissipation at T = 25 C for STN878 1.6 amb T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case for STD878 max 8.3 C/W thJC (1) R Thermal resistance junction-ambient for STN878 max 78 C/W thJA 2 1. Device mounted on PCB area of 1 cm . 2/10 Doc ID 13836 Rev 2 Obsolete Product(s) - Obsolete Product(s)