STD6NK50ZT4 STMicroelectronics

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93 - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET TYPE V R I Pw DSS DS(on) D STP6NK50Z 500 V <1.2 5.6 A 90 W STF6NK50Z 500 V <1.2 5.6 A 25 W STD6NK50Z 500 V <1.2 5.6 A 90 W TYPICAL R (on) = 0.93 DS 3 EXTREMELY HIGH dv/dt CAPABILITY 2 1 100% AVALANCHE TESTED GATE CHARGE MINIMIZED TO-220 TO-220FP VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING 3 REPEATIBILITY 1 DPAK DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established strip- based PowerMESH layout. In addition to pushing INTERNAL SCHEMATIC DIAGRAM on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDER CODES PART NUMBER MARKING PACKAGE PACKAGING STP6NK50Z P6NK50Z TO-220 TUBE STF6NK50Z F6NK50Z TO-220FP TUBE STD6NK50ZT4 D6NK50Z DPAK TAPE & REEL April 2004 1/12STP6NK50Z - STF6NK50Z - STD6NK50Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP6NK50Z STF6NK50Z STD6NK50Z V Drain-source Voltage (V =0) 500 V DS GS V Drain-gate Voltage (R =20k ) 500 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T =25C 5.6 5.6 (*) A D C I Drain Current (continuous) at T = 100C 3.5 3.5 (*) A D C I ( ) Drain Current (pulsed) 22.4 22.4 (*) A DM P Total Dissipation at T =25C 90 25 W TOT C Derating Factor 0.72 0.2 W/C V Gate source ESD(HBM-C=100pF, R=1.5K) 3000 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns V Insulation Withstand Voltage (DC) - 2500 V ISO T j Operating Junction Temperature -55to150 C T Storage Temperature stg ( ) Pulse width limited by safe operating area (1) I 5.6A, di/dt 200 A/s, V V ,T T SD DD (BR)DSS j JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 TO-220FP DPAK Rthj-case Thermal Resistance Junction-case Max 1.38 5 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 5.6 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 180 mJ AS (starting T =25 C, I =I ,V =50V) j D AR DD GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-SourceBreakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12