STD6N52K3 STMicroelectronics

STD6N52K3 Datasheet N-channel 525 V, 1 typ., 6.5 A MDmesh K3 Power MOSFET in DPAK package Features V R I P Order codes TAB DS DS(on) max. D TOT STD6N52K3 525 V 1.2 5 A 70 W 3 2 1 100% avalanche tested DPAK Extremely high dv/dt capability Very low intrinsic capacitance D(2, TAB) Improved diode reverse recovery characteristics Zener-protected G(1) Applications Switching applications S(3) Description AM01475V1 This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Product status link STD6N52K3 Product summary Order code STD6N52K3 Marking 6N52K3 Package DPAK Packing Tape and reel DS5919 - Rev 3 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD6N52K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate- source voltage 30 V GS I Drain current (continuous) at T = 25 C 5 A D C I Drain current (continuous) at T = 100 C 3 A D C (1) I Drain current (pulsed) 20 A DM P Total dissipation at T = 25 C 70 W TOT C I Avalanche current, repetitive or not-repetitive 2.5 A AR (2) E Single pulse avalanche energy 110 mJ AS (3) dv/dt Peak diode recovery voltage slope 12 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. Starting Tj = 25 C, I = I , V = 50 V. D AR DD 3. I 5 A, di/dt 400 A/s, V = 80% V , V V . SD DD (BR)DSS DS peak (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.79 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. DS5919 - Rev 3 page 2/18