STD65N55F3 Datasheet Automotive-grade N-channel 55 V, 6.5 m typ., 80 A STripFET F3 Power MOSFET in a DPAK package Features V R max. I P Type TAB DS DS(on) D TOT STD65N55F3 55 V 8.5 m 80 A 110 W 3 2 1 DPAK AEC-Q101 qualified 100% avalanche tested D(2, TAB) Applications Switching applications G(1) Description This device is an N-channel Power MOSFET developed using STripFET F3 S(3) technology. It is designed to minimize on-resistance and gate charge to provide AM01475v1 noZen superior switching performance. Product status STD65N55F3 Product summary Order code STD65N55F3 Marking 65N55F3 Package DPAK Packing Tape and reel DS5128 - Rev 5 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD65N55F3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 55 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 80 A C I D Drain current (continuous) at T = 100 C 56 A C (1) I Drain current (pulsed) 320 A DM P Total power dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery 11 V/ns (3) E Single pulse avalanche energy 390 mJ AS T Operating junction temperature range j -55 to 175 C T Storage temperature range stg 1. Pulse width is limited by safe operating area. 2. I 65A, di/dt 300 A/s, V V , T T SD DD (BR)DSS j jmax 3. Starting T = 25C, I = 32 A, V = 25 V j D DD Table 2. Thermal resistance Symbol Parameter Value Unit R Thermal resistance junction-case 1.36 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1- inch FR-4 board, 2oz Cu. DS5128 - Rev 5 page 2/17