STB6N80K5, STD6N80K5 STI6N80K5, STP6N80K5 Datasheet N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5 Power MOSFETs in DPAK, DPAK, IPAK and TO-220 packages TAB TAB Features 3 2 2 1 3 V R max. I P Order codes 1 DS DS(on) D TOT DPAK 2 D PAK STB6N80K5 TAB TAB STD6N80K5 800 V 1.6 4.5 A 85 W STI6N80K5 3 3 2 2 1 1 TO-220 STP6N80K5 IPAK Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) D(2, TAB) Ultra-low gate charge 100% avalanche tested Zener-protected G(1) Applications S(3) Switching applications NG1D2TS3Z Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status links STB6N80K5 STD6N80K5 STI6N80K5 STP6N80K5 DS9676 - Rev 4 - December 2021 www.st.com For further information contact your local STMicroelectronics sales office.STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 4.5 C I A D Drain current (continuous) at T = 100 C 2.8 C (1) I Drain current (pulsed) 18 A DM P Total power dissipation at T = 25 C 85 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. I 4.5 A, di/dt=100 A/s V (peak) < V , V = 80% V . SD DS (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter 2 2 DPAK TO-220 Unit D PAK I PAK R Thermal resistance, junction-to-case 1.47 thJC R Thermal resistance, junction-to-ambient 62.50 C/W thJA (1) R Thermal resistance, junction-to-board 30 50 thJB 1. When mounted on an 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 1.5 A AR (2) E Single pulse avalanche energy 85 mJ AS 1. Pulse width limited by T max. J 2. Starting T = 25 C, I = I , V = 50 V. J D AR DD DS9676 - Rev 4 page 2/32