X-On Electronics has gained recognition as a prominent supplier of STD6N80K5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD6N80K5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD6N80K5 STMicroelectronics

STD6N80K5 electronic component of STMicroelectronics
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See Product Specifications
Part No.STD6N80K5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STD6N80K5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 1.2315 ea
Line Total: USD 3078.75 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 1.3739

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 1.2315

0
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5965
10 : USD 0.5852
30 : USD 0.5759
100 : USD 0.5683

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 5.0745
10 : USD 1.833
25 : USD 1.7295
100 : USD 1.4705
500 : USD 1.2117
1000 : USD 1.0025

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 76
Multiples : 1
76 : USD 1.079
100 : USD 1.0021
250 : USD 0.982

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 76
Multiples : 76
76 : USD 1.0364
100 : USD 0.9625
250 : USD 0.9432

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Ciss - Input Capacitance
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We are delighted to provide the STD6N80K5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD6N80K5 and other electronic components in the MOSFETs category and beyond.

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STB6N80K5, STD6N80K5 STI6N80K5, STP6N80K5 Datasheet N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5 Power MOSFETs in DPAK, DPAK, IPAK and TO-220 packages TAB TAB Features 3 2 2 1 3 V R max. I P Order codes 1 DS DS(on) D TOT DPAK 2 D PAK STB6N80K5 TAB TAB STD6N80K5 800 V 1.6 4.5 A 85 W STI6N80K5 3 3 2 2 1 1 TO-220 STP6N80K5 IPAK Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) D(2, TAB) Ultra-low gate charge 100% avalanche tested Zener-protected G(1) Applications S(3) Switching applications NG1D2TS3Z Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status links STB6N80K5 STD6N80K5 STI6N80K5 STP6N80K5 DS9676 - Rev 4 - December 2021 www.st.com For further information contact your local STMicroelectronics sales office.STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 4.5 C I A D Drain current (continuous) at T = 100 C 2.8 C (1) I Drain current (pulsed) 18 A DM P Total power dissipation at T = 25 C 85 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. I 4.5 A, di/dt=100 A/s V (peak) < V , V = 80% V . SD DS (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter 2 2 DPAK TO-220 Unit D PAK I PAK R Thermal resistance, junction-to-case 1.47 thJC R Thermal resistance, junction-to-ambient 62.50 C/W thJA (1) R Thermal resistance, junction-to-board 30 50 thJB 1. When mounted on an 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 1.5 A AR (2) E Single pulse avalanche energy 85 mJ AS 1. Pulse width limited by T max. J 2. Starting T = 25 C, I = I , V = 50 V. J D AR DD DS9676 - Rev 4 page 2/32

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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