X-On Electronics has gained recognition as a prominent supplier of STD6N95K5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD6N95K5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD6N95K5 STMicroelectronics

STD6N95K5 electronic component of STMicroelectronics
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See Product Specifications
Part No.STD6N95K5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 950V 1 Ohm 9A Zener SuperMESH 5
Datasheet: STD6N95K5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0726 ea
Line Total: USD 1.07 
Availability - 130
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1244025
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 1.521

130
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0726
10 : USD 0.8663
30 : USD 0.7539
100 : USD 0.6279
500 : USD 0.5707
1000 : USD 0.5439

2410
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 13
Multiples : 1
13 : USD 3.2175
50 : USD 3.1688
100 : USD 2.34
200 : USD 2.21
500 : USD 1.95
1000 : USD 1.82
2000 : USD 1.7875

19400
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 1.6211
5000 : USD 1.5834

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STD6N95K5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD6N95K5 and other electronic components in the MOSFETs category and beyond.

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STD6N95K5, STP6N95K5 STU6N95K5, STW6N95K5 Datasheet N-channel 950 V, 1 typ., 9 A MDmesh K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packages Features TAB TAB Order codes V R max. I P DS DS(on) D TOT 3 1 DPAK STD6N95K5 3 TO-220 STP6N95K5 2 1 950 V 1.25 9 A 90 W TAB STU6N95K5 STW6N95K5 DPAK 950 V worldwide best R DS(on) 3 2 IPAK 1 3 Worldwide best FOM (figure of merit) 2 TO-247 1 Ultra low gate charge 100% avalanche tested D(2, TAB) Zener-protected G(1) Applications Switching applications Description S(3) AM01475V1 These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD6N95K5 STP6N95K5 STU6N95K5 STW6N95K5 DS6666 - Rev 5 - March 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate- source voltage 30 V GS I Drain current (continuous) at T = 25 C 9 A D C I Drain current (continuous) at T = 100 C 6 A D C (1) I Drain current (pulsed) 24 A DM P Total dissipation at T = 25 C 90 W TOT C (2) I Max current during repetitive or single pulse avalanche 3 A AR Single pulse avalanche energy E 90 mJ AS (starting T = 25 C, I =I , V = 50 V) J D AS DD (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Operating junction temperature range j - 55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. Pulse width limited by T Jmax. 3. I 9 A, di/dt 100 A/s, V V SD DS(peak) (BR)DSS 4. V 760 V DS Table 2. Thermal data Value Symbol Parameter Unit TO-220, DPAK TO-247 IPAK R Thermal resistance junction-case 1.39 C/W thj-case R Thermal resistance junction-amb 62.5 50 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1 inch FR-4 board, 2 oz Cu DS6666 - Rev 5 page 2/26

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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