X-On Electronics has gained recognition as a prominent supplier of STD6N65M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD6N65M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD6N65M2 STMicroelectronics

STD6N65M2 electronic component of STMicroelectronics
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Part No.STD6N65M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STD6N65M2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
15: USD 0.5085 ea
Line Total: USD 7.63 
Availability - 0
MOQ: 15  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.4741
5000 : USD 0.46

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 1.4418

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 2.8829
10 : USD 2.483
100 : USD 1.9369
500 : USD 1.6
1000 : USD 1.3903

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 2.8829
10 : USD 2.483
100 : USD 1.9369
500 : USD 1.6
1000 : USD 1.3903

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 1.512
10 : USD 1.2852
100 : USD 0.9828
500 : USD 0.8694
1000 : USD 0.6857
2500 : USD 0.6093

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 3.8059
10 : USD 1.424

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 15
Multiples : 1
15 : USD 0.6661
25 : USD 0.5792
100 : USD 0.5676

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 15
Multiples : 1
15 : USD 0.5085
25 : USD 0.484
100 : USD 0.4575
250 : USD 0.453
500 : USD 0.4481
1000 : USD 0.4432

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.4698

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Series
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STD6N65M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD6N65M2 and other electronic components in the MOSFETs category and beyond.

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STB6N65M2, STD6N65M2 Datasheet N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in DPAK and DPAK packages Features TAB TAB V R max. I Order code Package DS DS(on) D 3 2 STB6N65M2 DPAK 2 650 V 1.35 4 A 1 3 STD6N65M2 DPAK 1 2 D PAK DPAK Extremely low gate charge Excellent output capacitance (C ) profile OSS D(2, TAB) 100% avalanche tested Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status STB6N65M2 STD6N65M2 Product summary Order code STB6N65M2 Marking 6N65M2 Package DPAK Packing Tape and reel Order code STD6N65M2 Marking 6N65M2 Package DPAK Packing Tape and reel DS10516 - Rev 2 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB6N65M2, STD6N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 4 A C I D Drain current (continuous) at T = 100 C 2.5 A C (1) I Drain current (pulsed) 16 A DM P Total power dissipation at T = 25 C 60 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by T . jmax 2. I 4 A, di/dt 400 A/s V < V , V = 400 V. SD DS peak (BR)DSS DD 3. V 520 V. DS Table 2. Thermal data Value Symbol Parameter Unit DPAK DPAK R Thermal resistance junction-case 2.08 C/W thj-case (1) R Thermal resistance junction-pcb 30 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 0.5 A AR (pulse width limited by T max) j Single pulse avalanche energy E 100 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10516 - Rev 2 page 2/22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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