STB6N65M2, STD6N65M2 Datasheet N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in DPAK and DPAK packages Features TAB TAB V R max. I Order code Package DS DS(on) D 3 2 STB6N65M2 DPAK 2 650 V 1.35 4 A 1 3 STD6N65M2 DPAK 1 2 D PAK DPAK Extremely low gate charge Excellent output capacitance (C ) profile OSS D(2, TAB) 100% avalanche tested Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status STB6N65M2 STD6N65M2 Product summary Order code STB6N65M2 Marking 6N65M2 Package DPAK Packing Tape and reel Order code STD6N65M2 Marking 6N65M2 Package DPAK Packing Tape and reel DS10516 - Rev 2 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB6N65M2, STD6N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 4 A C I D Drain current (continuous) at T = 100 C 2.5 A C (1) I Drain current (pulsed) 16 A DM P Total power dissipation at T = 25 C 60 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by T . jmax 2. I 4 A, di/dt 400 A/s V < V , V = 400 V. SD DS peak (BR)DSS DD 3. V 520 V. DS Table 2. Thermal data Value Symbol Parameter Unit DPAK DPAK R Thermal resistance junction-case 2.08 C/W thj-case (1) R Thermal resistance junction-pcb 30 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 0.5 A AR (pulse width limited by T max) j Single pulse avalanche energy E 100 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10516 - Rev 2 page 2/22