STD7LN80K5 STMicroelectronics

STD7LN80K5 N-channel 800 V, 0.95 typ., 5 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD7LN80K5 800 V 1.15 5 A Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) DPAK Ultra-low gate charge 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram D(2, TAB) Applications Switching applications Description This very high voltage N-channel Power G(1) MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. AM15572v1 tab S(3) Table 1: Device summary Order code Marking Package Packing STD7LN80K5 7LN80K5 DPAK Tape and reel December 2015 DocID028774 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STD7LN80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 DPAK (TO-252) packing information ............................................... 13 5 Revision history ............................................................................ 15 2/16 DocID028774 Rev 1