STD7N65M6 Datasheet N-channel 650 V, 0.91 typ., 5 A, MDmesh M6 Power MOSFET in a DPAK package Features V R max. I Order code TAB DS DS(on) D STD7N65M6 650 V 0.99 5 A 3 2 1 Reduced switching losses DPAK Lower R per area vs previous generation DS(on) Low gate input resistance D(2, TAB) 100% avalanche tested Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STD7N65M6 Product summary Order code STD7N65M6 Marking 7N65M6 Package DPAK Packing Tape and reel DS11776 - Rev 2 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD7N65M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 5 A D C I Drain current (continuous) at T = 100 C 3.2 A D C (1) I Drain current (pulsed) 20 A DM P Total power dissipation at T = 25 C 60 W TOT C (2) dv/dt Peak diode recovery voltage slope 5 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 5 A, di/dt 400 A/s, V < V , V = 400 V SD DS peak (BR)DSS DD 3. V 520 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.08 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on FR-4 board of inch, 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 1.5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 95 mJ as j D AR DD DS11776 - Rev 2 page 2/18