STD7NK40ZT4 STMicroelectronics

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP Datasheet N-channel 400 V, 0.85 typ., 5.4 A, SuperMESH Power MOSFETs in DPAK, TO-220 and TO-220FP packages Features TAB 2 3 Order code V R max. I P DS DS(on) D TOT 1 DPAK STD7NK40ZT4 70 W TAB STP7NK40Z 400 V 1 5.4 A 70 W STP7NK40ZFP 25 W 3 3 2 2 1 1 TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested D(2, TAB) Gate charge minimized Very low intrinsic capacitance Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status links STD7NK40ZT4 STP7NK40Z STP7NK40ZFP Product summary STD7NK40ZT4 Marking D7NK40Z Package DPAK Packing Tape and reel STP7NK40Z Marking P7NK40Z Package TO-220 Packing Tube STP7NK40ZFP Marking P7NK40ZFP Package TO-220FP Packing Tube DS2855 - Rev 3 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit STD7NK40ZT4 STP7NK40Z STP7NK40ZFP V Drain-source voltage 400 V DS V Drain-gate voltage (R = 20 k) 400 V DGR GS V Gate-source voltage 30 V GS (1) Drain current (continuous) at T = 25 C 5.4 5.4 5.4 A C I D (1) Drain current (continuous) at T = 100 C 3.4 3.4 3.4 A C (2) (1) I Drain current (pulsed) 21.6 21.6 21.6 A DM P Total dissipation at T = 25 C 70 70 25 W TOT C Avalanche current, repetitive or non-repetitive I 5.4 A AR (pulse width is limited by T max.) J Single pulse avalanche energy E 130 mJ AS (starting T = 25 C, I = I , V = 50 V) J D AR DD Gate-source, human body model, ESD 3 kV R = 1.5 k, C = 100 pF (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s, T = 25 C) C T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. This value is limited by maximum junction temperature. 2. Pulse width is limited by safe operating area. 3. I 5.4 A, di/dt 200 A/s, V < V SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-220FP R Thermal resistance junction-case 1.78 1.78 5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board. DS2855 - Rev 3 page 2/22