STD80N6F6 STMicroelectronics

STD80N6F6 Automotive-grade N-channel 60 V, 4.4 m typ., 80 A STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD80N6F6 60 V 5 m 80 A AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications Switching applications D(2, TAB) Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology G(1) with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. S(3) AM01475v1 noZen Table 1: Device summary Order code Marking Package Packaging STD80N6F6 80N6F6 DPAK Tape and reel May 2017 DocID023471 Rev 3 1/16 www.st.com This is information on a product in full production. Contents STD80N6F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 DPAK (TO-252) tape and reel mechanical data .............................. 13 5 Revision history ............................................................................ 15 2/16 DocID023471 Rev 3