STD8N80K5 STMicroelectronics

STD8N80K5 Datasheet N-channel 800 V, 0.8 typ., 6 A MDmesh K5 Power MOSFET in a DPAK package Features Order code V R max. I P DS DS(on ) D TOT TAB STD8N80K5 800 V 0.95 6 A 110 W 3 2 1 Industrys lowest R x area DS(on) DPAK Industrys best FoM (figure of merit) Ultra-low gate charge D(2, TAB) 100% avalanche tested Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status STD8N80K5 Product summary Order code STD8N80K5 Marking 8N80K5 Package DPAK Packing Tape and reel DS9561 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD8N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 6 A D C I Drain current (continuous) at T = 100 C 4 A D C (1) I Drain current pulsed 24 A DM P Total dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Operating junction temperature range j - 55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 6 A, di/dt 100 A/s V peak V SD DS (BR)DSS 3. V 640 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 2 A AR (pulse width limited by T ) jmax. Single pulse avalanche energy E 114 mJ AS (starting T = 25 C, I = I , V = 50 V) J D AR DD DS9561 - Rev 3 page 2/19