STD8NM50N STMicroelectronics

STD8NM50N, STP8NM50N Datasheet N-channel 500 V, 0.73 typ., 5 A, MDmesh II Power MOSFETs in DPAK and TO-220 packages Features V T R max. I Order codes DS Jmax DS(on) D TAB TAB STD8NM50N 550 V 0.79 5 A 2 3 STP8NM50N 1 3 2 100% avalanche tested DPAK TO-220 1 Low input capacitance and gate charge Low gate input resistance D(2, TAB) Applications Switching applications Description G(1) These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds S(3) lowest on-resistance and gate charge. They are therefore suitable for the most AM01475v1 noZen demanding high-efficiency converters. Product status links STD8NM50N STP8NM50N Product summary Order code STD8NM50N Marking 8NM50N Package DPAK Packing Tape and reel Order code STP8NM50N Marking 8NM50N Package TO-220 Packing Tube DS6808 - Rev 7 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD8NM50N, STP8NM50N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 500 DS V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 5 case I A D Drain current (continuous) at T = 100 C 3 case (1) I Drain current (pulsed) 20 A DM P Total dissipation at T = 25 C 45 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature 2. I 5 A, di/dt 400 A/s, V V , V = 80% V SD DS(Peak) (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 R Thermal resistance junction-case 2.78 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1 inch FR-4, 2 Oz copper board Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 2 A AR Jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 140 mJ AS j D AR DD DS6808 - Rev 7 page 2/21