STD7NS20T4 STMicroelectronics

STD7NS20T4 Datasheet N-channel 200 V, 290 m typ., 7 A, STripFET Power MOSFET in a DPAK package Features V R max. I Order code TAB DS DS(on) D STD7NS20T4 200 V 400 m 7 A 3 2 1 Extremely high dv/dt capability DPAK Very low intrinsic capacitance Gate charge minimized D(2, TAB) Applications Switching applications G(1) Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate S(3) AM01475v1 noZen charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. Product status link STD7NS20T4 Product summary Order code STD7NS20T4 Marking D7NS20 Package DPAK Packing Tape and reel DS12856 - Rev 1 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD7NS20T4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0 V) 200 V DSS GS V Drain-gate voltage (R = 20 k) 200 V DGR GS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 7 A C I D Drain current (continuous) at T = 100 C 4.4 A C (1) I Drain current (pulsed) 28 A DM P Total power dissipation at T = 25 C 86 W TOT C (2) E Single pulse avalanche energy 110 mJ AS (3) dv/dt Drain-body diode dynamic dv/dt ruggedness 5.8 V/ns T Storage temperature range stg -65 to 175 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. Starting T = 25 C, I = 4.5 A J D 3. I = 7 A, di/dt = 520 A/s, V = 50 V, T < T SD DD J Jmax Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.74 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board. DS12856 - Rev 1 page 2/16