STD830CP40 STMicroelectronics

STD830CP40 Complementary transistor pair in a single package Datasheet production data Features Low V CE(sat) Simplified circuit design Reduced component count 8 Low spread of dynamic parameters 4 1 Application Compact fluorescent lamp (CFL) 220 V mains DIP-8 Description The STD830CP40 is a hybrid complementary pair Figure 1. Internal schematic diagram of power bipolar transistors manufactured by using the high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. The STD830CP40 is housed in dual island DIP-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in a new solution for compact fluorescent lamp (CFL). Table 1. Device summary Order code Marking Package Packing STD830CP40 D830CP40 DIP-8 Tube October 2012 Doc ID 15767 Rev 3 1/10 This is information on a product in full production. www.st.com 10Electrical ratings STD830CP40 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit NPN PNP V Collector-base voltage (I = 0) 700 500 V CBO E V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0, I = 1.5 A, t < 10 ms) V V EBO C B p (BR)EBO I Collector current 3 A C I Collector peak current (t < 5 ms) 6 A CM P I Base current 1.5 A B I Base peak current (t < 1 ms) 3 A BM P P Total dissipation at T = 25 C single transistor 3 W TOT amb P Total dissipation at T = 25 C single transistor 45 W TOT case T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-ambient (single transistor) 42 C/W thJA (1) R Thermal resistance junction-case (single transistor) 2.7 C/W thJC 1. When mounted on 25mm square pad of 2 oz. copper, t 10 sec. Note: For PNP types voltage and current values are negative 2/10 Doc ID 15767 Rev 3