STD80N4F6 STMicroelectronics

STD80N4F6 Automotive-grade N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a DPAK package Datasheet production data Features Order code V R max I DS DS(on) D TAB STD80N4F6 40 V 6 m 80 A 3 Designed for automotive applications and 1 AEC-Q101 qualified DPAK Low gate charge Very low on-resistance High avalanche ruggedness Figure 1. Internal schematic diagram Applications Switching applications % 7 Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET * DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 6 0 Y Table 1. Device summary Order code Marking Package Packaging STD80N4F6 80N4F6 DPAK Tape and reel March 2014 DocID026016 Rev 1 1/16 This is information on a product in full production. www.st.comContents STD80N4F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID026016 Rev 1