Product Information

STD96N3LLH6

STD96N3LLH6 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 30V 0.0037 Ohm 80A STripFET VI
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.6828 ea
Line Total: USD 1707

4850 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
4850 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 2500
Multiples : 2500

Stock Image

STD96N3LLH6
STMicroelectronics

2500 : USD 0.6278
5000 : USD 0.6278
12500 : USD 0.6278

4850 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 2500
Multiples : 2500

Stock Image

STD96N3LLH6
STMicroelectronics

2500 : USD 0.6828
5000 : USD 0.6507
12500 : USD 0.621

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Tradename
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STD96N3LLH6 N-channel 30 V, 0.0037 , 80 A, DPAK STripFET VI DeepGATE Power MOSFET Features Type V R max I DSS DS(on) D STD96N3LLH6 30 V 0.0042 80 A R * Q industry benchmark DS(on) g 3 Extremely low on-resistance R 1 DS(on) High avalanche ruggedness Low gate drive power losses DPAK Application Switching applications Automotive Figure 1. Internal schematic diagram Description This product is an N-channel Power MOSFET that D (TAB or 2) th utilizes the 6 generation of design rules of STs proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) G(1) S(3) AM01474v1 Table 1. Device summary Order codes Marking Package Packaging STD96N3LLH6 96N3LLH6 DPAK Tape and reel January 2011 Doc ID 18432 Rev 1 1/15 www.st.com 15 Contents STD96N3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Packaging mechanical data 12 6 Revision history . 14 2/15 Doc ID 18432 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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