STD96N3LLH6 STMicroelectronics

STD96N3LLH6 N-channel 30 V, 0.0037 , 80 A, DPAK STripFET VI DeepGATE Power MOSFET Features Type V R max I DSS DS(on) D STD96N3LLH6 30 V 0.0042 80 A R * Q industry benchmark DS(on) g 3 Extremely low on-resistance R 1 DS(on) High avalanche ruggedness Low gate drive power losses DPAK Application Switching applications Automotive Figure 1. Internal schematic diagram Description This product is an N-channel Power MOSFET that D (TAB or 2) th utilizes the 6 generation of design rules of STs proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) G(1) S(3) AM01474v1 Table 1. Device summary Order codes Marking Package Packaging STD96N3LLH6 96N3LLH6 DPAK Tape and reel January 2011 Doc ID 18432 Rev 1 1/15 www.st.com 15 Contents STD96N3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Packaging mechanical data 12 6 Revision history . 14 2/15 Doc ID 18432 Rev 1