STD8NM60ND STMicroelectronics

STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features V R DSS DS(on) Type I 3 D ( Tjmax) max 2 1 3 2 STD8NM60ND 650 V < 0.70 7 A 1 IPAK STF8NM60ND 650 V < 0.70 7 A TO-220 (1) STP8NM60ND 650 V < 0.70 7 A STU8NM60ND 650 V < 0.70 7 A 1. Limited only by maximum temperature allowed 3 3 1 2 1 The worldwide best R * area amongst the DS(on) DPAK fast recovery diode devices TO-220FP 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Extremely high dv/dt and avalanche capabilities Application Switching applications Description The FDmesh II series belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STD8NM60ND 8NM60ND DPAK Tape and reel STF8NM60ND 8NM60ND TO-220FP Tube STP8NM60ND 8NM60ND TO-220 Tube STU8NM60ND 8NM60ND IPAK Tube February 2009 Rev 1 1/17 www.st.com 17Contents STx8NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 16 2/17