X-On Electronics has gained recognition as a prominent supplier of STD8NF25 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD8NF25 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD8NF25 STMicroelectronics

STD8NF25 electronic component of STMicroelectronics
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Part No.STD8NF25
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 250 V 318 mOhm 8 A STripFET II
Datasheet: STD8NF25 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.3819 ea
Line Total: USD 2.38 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.4906
5000 : USD 0.4544
7500 : USD 0.4544
10000 : USD 0.4544
12500 : USD 0.4544

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0395
10 : USD 0.8327
100 : USD 0.6005
500 : USD 0.5281
1000 : USD 0.4341

0
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6021
10 : USD 0.499
30 : USD 0.454
100 : USD 0.3996
500 : USD 0.3733
1000 : USD 0.3602

0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 2.3819
10 : USD 0.8717
100 : USD 0.6421
500 : USD 0.5075
1000 : USD 0.406
2500 : USD 0.3687

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 182
Multiples : 182
182 : USD 0.4573

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 182
Multiples : 182
182 : USD 0.4378

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Qualification
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the STD8NF25 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD8NF25 and other electronic components in the MOSFETs category and beyond.

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STD8NF25 Datasheet Automotive-grade N-channel 250 V, 318 m, 8 A, STripFET II Power MOSFET in a DPAK package Features Order code V R max. I DS DS(on) D TAB STD8NF25 250 V 420 m 8 A 3 2 1 DPAK AEC-Q101 qualified 100% avalanche tested D(2, TAB) 175 C maximum junction temperature Applications Switching applications G(1) Description S(3) This Power MOSFET series has been developed using STMicroelectronics unique AM01475v1 noZen STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD8NF25 Product summary Order code STD8NF25 Marking 8NF25 Package DPAK Packing Tape and reel DS7152 - Rev 2 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD8NF25 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 250 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 8 A C I D Drain current (continuous) at T = 100 C 6 A C (1) I Drain current (pulsed) 32 A DM P Total dissipation at T = 25 C 72 W TOT C T Operating junction temperature range J -55 to 175 C T Storage temperature range stg 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.08 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 8 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 110 mJ AS J D AR DD DS7152 - Rev 2 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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