STD8NF25 STMicroelectronics

STD8NF25 Datasheet Automotive-grade N-channel 250 V, 318 m, 8 A, STripFET II Power MOSFET in a DPAK package Features Order code V R max. I DS DS(on) D TAB STD8NF25 250 V 420 m 8 A 3 2 1 DPAK AEC-Q101 qualified 100% avalanche tested D(2, TAB) 175 C maximum junction temperature Applications Switching applications G(1) Description S(3) This Power MOSFET series has been developed using STMicroelectronics unique AM01475v1 noZen STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD8NF25 Product summary Order code STD8NF25 Marking 8NF25 Package DPAK Packing Tape and reel DS7152 - Rev 2 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD8NF25 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 250 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 8 A C I D Drain current (continuous) at T = 100 C 6 A C (1) I Drain current (pulsed) 32 A DM P Total dissipation at T = 25 C 72 W TOT C T Operating junction temperature range J -55 to 175 C T Storage temperature range stg 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.08 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 8 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 110 mJ AS J D AR DD DS7152 - Rev 2 page 2/16