X-On Electronics has gained recognition as a prominent supplier of STF11N65M5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STF11N65M5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STF11N65M5 STMicroelectronics

STF11N65M5 electronic component of STMicroelectronics
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Part No.STF11N65M5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 650V 0.43 Ohm MDmeshV 710 VDSS
Datasheet: STF11N65M5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
23: USD 1.7798 ea
Line Total: USD 40.94 
Availability - 2996
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ: 23  Multiples: 1
Pack Size: 1
Availability Price Quantity
2996
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 23
Multiples : 1
23 : USD 1.7798
50 : USD 1.6852
100 : USD 1.6065
200 : USD 1.2915
1000 : USD 1.1829
2000 : USD 1.123

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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Technology
Number of Channels
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STF11N65M5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STF11N65M5 and other electronic components in the MOSFETs category and beyond.

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STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5 Datasheet N-channel 650 V, 0.43 typ., 9 A MDmesh M5 Power MOSFETs in a DPAK, DPAK, TO-220FP and TO-220 packages Features TAB TAB 2 3 V DS 3 1 1 Order code R max. I DS(on) D 2 DPAK D PAK T jmax. TAB STB11N65M5 STD11N65M5 710 V 0.48 9 A 3 2 3 1 STF11N65M5 2 1 TO-220 TO-220FP STP11N65M5 D(2, TAB) Extremely low R DS(on) Low gate charge and input capacitance Excellent switching performance G(1) 100% avalanche tested Applications S(3) AM01475v1 noZen Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making Product status them particularly suitable for applications requiring high power and superior efficiency. STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 DS8920 - Rev 3 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value 2 D PAK Symbol Parameter Unit TO-220FP DPAK TO-220 V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 9 9 A D C (1) I Drain current (continuous) at T = 100 C 5.6 5.6 A D C (2) (1) I Drain current (pulsed) 36 A 36 DM P Total dissipation at T = 25 C 85 25 W TOT C (3) Peak diode recovery voltage slope 15 V/ns dv/dt Insulation withstand voltage (RMS) from all three V 2500 V ISO leads to external heat sink (t = 1 s T = 25 C) c T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 9 A, di/dt 400 A/s V < V , V = 400 V. SD DS peak (BR)DSS DD Table 2. Thermal data Value Symbol Parameter Unit 2 D PAK DPAK TO-220FP TO-220 R Thermal resistance junction-case 1.47 5.0 1.47 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 30 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 2 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 130 mJ AS j D AR DD DS8920 - Rev 3 page 2/30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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