STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5 Datasheet N-channel 650 V, 0.43 typ., 9 A MDmesh M5 Power MOSFETs in a DPAK, DPAK, TO-220FP and TO-220 packages Features TAB TAB 2 3 V DS 3 1 1 Order code R max. I DS(on) D 2 DPAK D PAK T jmax. TAB STB11N65M5 STD11N65M5 710 V 0.48 9 A 3 2 3 1 STF11N65M5 2 1 TO-220 TO-220FP STP11N65M5 D(2, TAB) Extremely low R DS(on) Low gate charge and input capacitance Excellent switching performance G(1) 100% avalanche tested Applications S(3) AM01475v1 noZen Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making Product status them particularly suitable for applications requiring high power and superior efficiency. STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 DS8920 - Rev 3 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value 2 D PAK Symbol Parameter Unit TO-220FP DPAK TO-220 V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 9 9 A D C (1) I Drain current (continuous) at T = 100 C 5.6 5.6 A D C (2) (1) I Drain current (pulsed) 36 A 36 DM P Total dissipation at T = 25 C 85 25 W TOT C (3) Peak diode recovery voltage slope 15 V/ns dv/dt Insulation withstand voltage (RMS) from all three V 2500 V ISO leads to external heat sink (t = 1 s T = 25 C) c T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 9 A, di/dt 400 A/s V < V , V = 400 V. SD DS peak (BR)DSS DD Table 2. Thermal data Value Symbol Parameter Unit 2 D PAK DPAK TO-220FP TO-220 R Thermal resistance junction-case 1.47 5.0 1.47 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 30 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 2 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 130 mJ AS j D AR DD DS8920 - Rev 3 page 2/30