STF11NM50N STMicroelectronics

STF11NM50N N-channel 500 V, 0.40 typ., 8.5 A MDmesh II Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V T max R max I DS J DS(on) D STF11NM50N 550 V 0.47 8.5 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications TO-220FP Switching applications Description Figure 1: Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STF11NM50N 11NM50N TO-220FP Tube June 2016 DocID028675 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STF11NM50N Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP package information ...................................................... 10 5 Revision history ............................................................................ 12 2/13 DocID028675 Rev 2